DOI: 10.1109/iedm.2015.7409760. Sub-60mV-swing negative-capacitance FinFET without hysteresis

Sub-60mV-swing negative-capacitance FinFET without hysteresis

10.1109/iedm.2015.7409760

Crossref proceedings-article

IEEE

2015 IEEE International Electron Devices Meeting (IEDM) (263)

Bibliography

Li, K.-S., Chen, P.-G., Lai, T.-Y., Lin, C.-H., Cheng, C.-C., Chen, C.-C., Wei, Y.-J., Hou, Y.-F., Liao, M.-H., Lee, M.-H., Chen, M.-C., Sheih, J.-M., Yeh, W.-K., Yang, F.-L., Salahuddin, S., & Hu, C. (2015). Sub-60mV-swing negative-capacitance FinFET without hysteresis. 2015 IEEE International Electron Devices Meeting (IEDM), 22.6.1-22.6.4.

Authors 16

Kai-Shin Li (first)
Pin-Guang Chen (additional)
Tung-Yan Lai (additional)
Chang-Hsien Lin (additional)
Cheng-Chih Cheng (additional)
Chun-Chi Chen (additional)
Yun-Jie Wei (additional)
Yun-Fang Hou (additional)
Ming-Han Liao (additional)
Min-Hung Lee (additional)
Min-Cheng Chen (additional)
Jia-Min Sheih (additional)
Wen-Kuan Yeh (additional)
Fu-Liang Yang (additional)
Sayeef Salahuddin (additional)
Chenming Hu (additional)

References 7 Referenced 167

{'key': 'ref4', 'first-page': '39', 'article-title': '0.2V Adiabatic NC-FinFET with 0.6 mA/µm ION and 0.1 nA/µm IOFF', 'author': 'hu', 'year': '2015', 'journal-title': 'Device Research Conference (DRC)'} / Device Research Conference (DRC) / 0.2V Adiabatic NC-FinFET with 0.6 mA/µm ION and 0.1 nA/µm IOFF by hu (2015)
10.1109/JPROC.2010.2066531
10.1109/JEDS.2015.2435492 / IEEE Journal of the Electron Devices Society / Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors by lee (2015)
10.1109/LED.2015.2402517
{'key': 'ref7', 'first-page': '218', 'article-title': 'A 10 nm Si-Based Bulk FinFets 6T SRAM with Multiple Fin Heights Technology for 25% Better Static Noise Margin', 'author': 'chen', 'year': '2013', 'journal-title': 'VLSI Symp Tech Dig'} / VLSI Symp Tech Dig / A 10 nm Si-Based Bulk FinFets 6T SRAM with Multiple Fin Heights Technology for 25% Better Static Noise Margin by chen (2013)
{'key': 'ref2', 'first-page': '1', 'article-title': 'Low power negative capacitance FETs for future quantum-well body technology', 'author': 'yeung', 'year': '2013', 'journal-title': 'VLSI-TSA'} / VLSI-TSA / Low power negative capacitance FETs for future quantum-well body technology by yeung (2013)
10.1021/nl071804g

Dates

Type	When
Created	9 years, 4 months ago (March 28, 2016, 11:11 a.m.)
Deposited	8 years, 1 month ago (June 24, 2017, 1:25 a.m.)
Indexed	2 weeks ago (Aug. 7, 2025, 5:03 a.m.)
Issued	9 years, 8 months ago (Dec. 1, 2015)
Published	9 years, 8 months ago (Dec. 1, 2015)
Published Print	9 years, 8 months ago (Dec. 1, 2015)

Funders 0

None

BibTeX

@inproceedings{Li_2015, title={Sub-60mV-swing negative-capacitance FinFET without hysteresis}, url={http://dx.doi.org/10.1109/iedm.2015.7409760}, DOI={10.1109/iedm.2015.7409760}, booktitle={2015 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Li, Kai-Shin and Chen, Pin-Guang and Lai, Tung-Yan and Lin, Chang-Hsien and Cheng, Cheng-Chih and Chen, Chun-Chi and Wei, Yun-Jie and Hou, Yun-Fang and Liao, Ming-Han and Lee, Min-Hung and Chen, Min-Cheng and Sheih, Jia-Min and Yeh, Wen-Kuan and Yang, Fu-Liang and Salahuddin, Sayeef and Hu, Chenming}, year={2015}, month=dec, pages={22.6.1-22.6.4} }

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