DOI: 10.1109/iedm.2010.5703392. High performance ultra-low energy RRAM with good retention and endurance

High performance ultra-low energy RRAM with good retention and endurance

10.1109/iedm.2010.5703392

Crossref proceedings-article

IEEE

2010 International Electron Devices Meeting (263)

Bibliography

Cheng, C. H., Tsai, C. Y., Chin, A., & Yeh, F. S. (2010). High performance ultra-low energy RRAM with good retention and endurance. 2010 International Electron Devices Meeting, 19.4.1-19.4.4.

Authors 4

C. H. Cheng (first)
C. Y. Tsai (additional)
Albert Chin (additional)
F. S. Yeh (additional)

References 16 Referenced 63

10.1109/VLSIT.2010.5556121
10.1109/IEDM.2009.5424411
10.1109/VLSIT.2010.5556180
10.1063/1.117795
10.1063/1.111861
10.1109/TED.2006.881013
10.1109/LED.2007.891265
{'key': 'ref4', 'first-page': '54', 'article-title': 'Very Low voltage ${\\rm SiO}_2$/HfON/HfAlO/TaN memory with fast speed and good retention', 'author': 'lai', 'year': '2006', 'journal-title': 'Symp on VLSI Tech Dig'} / Symp on VLSI Tech Dig / Very Low voltage ${\rm SiO}_2$/HfON/HfAlO/TaN memory with fast speed and good retention by lai (2006)
{'key': 'ref3', 'first-page': '165', 'article-title': 'Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention', 'author': 'chin', 'year': '2005', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retention by chin (2005)
10.1109/IEDM.2006.346733
{'key': 'ref5', 'first-page': '843', 'article-title': 'Good 150°C retention and fast erase charge-trapping-engineered memory with scaled Si3N4', 'author': 'lin', 'year': '2008', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Good 150°C retention and fast erase charge-trapping-engineered memory with scaled Si3N4 by lin (2008)
{'key': 'ref8', 'first-page': '101', 'article-title': 'Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications', 'author': 'seong', 'year': '2009', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile memory applications by seong (2009)
10.1109/VLSIT.2008.4588578
{'key': 'ref2', 'first-page': '210', 'article-title': 'Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large $\\Delta{\\rm V}_{\\rm th}$ and good retention', 'author': 'lai', 'year': '2005', 'journal-title': 'Symp on VLSI Tech Dig'} / Symp on VLSI Tech Dig / Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large $\Delta{\rm V}_{\rm th}$ and good retention by lai (2005)
{'journal-title': 'The International Technology Roadmap for Semiconductors (ITRS)', 'year': '2009', 'key': 'ref1'} / The International Technology Roadmap for Semiconductors (ITRS) (2009)
10.1109/IEDM.2007.4419062

Dates

Type	When
Created	14 years, 6 months ago (Jan. 28, 2011, 3:08 p.m.)
Deposited	8 years, 5 months ago (March 21, 2017, 5:31 a.m.)
Indexed	3 months, 2 weeks ago (May 5, 2025, 8:11 p.m.)
Issued	14 years, 8 months ago (Dec. 1, 2010)
Published	14 years, 8 months ago (Dec. 1, 2010)
Published Print	14 years, 8 months ago (Dec. 1, 2010)

Funders 0

None

BibTeX

@inproceedings{Cheng_2010, title={High performance ultra-low energy RRAM with good retention and endurance}, url={http://dx.doi.org/10.1109/iedm.2010.5703392}, DOI={10.1109/iedm.2010.5703392}, booktitle={2010 International Electron Devices Meeting}, publisher={IEEE}, author={Cheng, C. H. and Tsai, C. Y. and Chin, Albert and Yeh, F. S.}, year={2010}, month=dec, pages={19.4.1-19.4.4} }

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