DOI: 10.1109/iedm.2009.5424415. Chalcogenide PCM: a memory technology for next decade

Chalcogenide PCM: a memory technology for next decade

10.1109/iedm.2009.5424415

Crossref proceedings-article

IEEE

2009 IEEE International Electron Devices Meeting (IEDM) (263)

Bibliography

Bez, R. (2009). Chalcogenide PCM: a memory technology for next decade. 2009 IEEE International Electron Devices Meeting (IEDM).

Authors 1

Roberto Bez (first)

References 24 Referenced 73

10.1109/IEDM.2009.5424413
10.1109/VLSIT.2006.1705247
10.1109/IEDM.2009.5424409
10.1109/NVMT.2009.5429783
{'key': 'ref14', 'first-page': '222', 'article-title': 'Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond', 'author': 'pirovano', 'year': '2007', 'journal-title': "Proc ESSDERC'07"} / Proc ESSDERC'07 / Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond by pirovano (2007)
{'key': 'ref15', 'article-title': 'Impact of the current density increase on reliablity in scaled BJT-selected PCM for high density application', 'author': 'redaelli', 'year': '2010', 'journal-title': 'IRPS'} / IRPS / Impact of the current density increase on reliablity in scaled BJT-selected PCM for high density application by redaelli (2010)
10.1143/JJAP.48.04C060
10.1109/IEDM.2006.346910
10.1109/IEDM.2003.1269376
{'key': 'ref19', 'article-title': 'Can We Reach Tbit/sq.in. Storage Densities With Phase-Change Media?', 'author': 'wright', 'year': '2006', 'journal-title': 'Epcos'} / Epcos / Can We Reach Tbit/sq.in. Storage Densities With Phase-Change Media? by wright (2006)
10.1002/9780470181355
10.1109/.2006.1629475
10.1109/IMW.2009.5090604
{'key': 'ref5', 'article-title': 'Phase Change Materials – Science and Application', 'author': 'raoux', 'year': '2009'} / Phase Change Materials – Science and Application by raoux (2009)
10.1109/JSSC.2005.847531
{'key': 'ref7', 'first-page': '18', 'article-title': 'Novel uTrench PCM cell for embedded and standalone NVM applications', 'author': 'pellizzer', 'year': '2004', 'journal-title': 'Symp on VLSI Tech'} / Symp on VLSI Tech / Novel uTrench PCM cell for embedded and standalone NVM applications by pellizzer (2004)
{'key': 'ref2', 'article-title': 'OUM - A 180 nm NVM cell element technology for stand alone and embedded applications', 'author': 'lai', 'year': '2001', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / OUM - A 180 nm NVM cell element technology for stand alone and embedded applications by lai (2001)
{'key': 'ref1', 'first-page': '55', 'article-title': 'Non-Volatile Memories: Novel Concepts and Emerging Technologies', 'author': 'bez', 'year': '2008'} / Non-Volatile Memories: Novel Concepts and Emerging Technologies by bez (2008)
10.1109/VLSIC.2004.1346644
{'key': 'ref20', 'article-title': 'Development Lines for Phase Change Memories', 'author': 'bez', 'year': '2008', 'journal-title': 'Epcos'} / Epcos / Development Lines for Phase Change Memories by bez (2008)
10.1109/IMW.2009.5090598
{'key': 'ref21', 'article-title': 'Cross-point pcm with 4F2 cell size driven by low-contact-resistivity poly-Si diode', 'author': 'sasago', 'year': '2008', 'journal-title': 'VLSI Tech Symp T'} / VLSI Tech Symp T / Cross-point pcm with 4F2 cell size driven by low-contact-resistivity poly-Si diode by sasago (2008)
{'key': 'ref24', 'article-title': 'A Stackable Cross Point Phase Change Memory', 'author': 'kau', 'year': '2009', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / A Stackable Cross Point Phase Change Memory by kau (2009)
10.1103/PhysRevLett.21.1450

Dates

Type	When
Created	15 years, 4 months ago (March 30, 2010, 3:44 p.m.)
Deposited	8 years, 5 months ago (March 19, 2017, 12:25 a.m.)
Indexed	2 months, 2 weeks ago (June 3, 2025, 3:27 a.m.)
Issued	15 years, 8 months ago (Dec. 1, 2009)
Published	15 years, 8 months ago (Dec. 1, 2009)
Published Print	15 years, 8 months ago (Dec. 1, 2009)

Funders 0

None

BibTeX

@inproceedings{Bez_2009, title={Chalcogenide PCM: a memory technology for next decade}, url={http://dx.doi.org/10.1109/iedm.2009.5424415}, DOI={10.1109/iedm.2009.5424415}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Bez, Roberto}, year={2009}, month=dec }

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