Bibliography
Annunziata, R., Zuliani, P., Borghi, M., De Sandre, G., Scotti, L., Prelini, C., Tosi, M., Tortorelli, I., & Pellizzer, F. (2009). Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond. 2009 IEEE International Electron Devices Meeting (IEDM), 1â4.
References
4
Referenced
40
10.1109/ESSCIRC.2008.4681826
{'key': 'ref3', 'article-title': 'Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond', 'author': 'pirovano', 'year': '2007', 'journal-title': 'Proc ESSDERC'}
/ Proc ESSDERC / Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond by pirovano (2007)10.1109/VLSIT.2006.1705247
10.1109/IEDM.2003.1269271
Dates
Type | When |
---|---|
Created | 15 years, 4 months ago (March 30, 2010, 3:44 p.m.) |
Deposited | 8 years, 5 months ago (March 19, 2017, 12:25 a.m.) |
Indexed | 1 month, 2 weeks ago (July 6, 2025, 7 p.m.) |
Issued | 15 years, 8 months ago (Dec. 1, 2009) |
Published | 15 years, 8 months ago (Dec. 1, 2009) |
Published Print | 15 years, 8 months ago (Dec. 1, 2009) |
@inproceedings{Annunziata_2009, title={Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond}, url={http://dx.doi.org/10.1109/iedm.2009.5424413}, DOI={10.1109/iedm.2009.5424413}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Annunziata, R. and Zuliani, P. and Borghi, M. and De Sandre, G. and Scotti, L. and Prelini, C. and Tosi, M. and Tortorelli, I. and Pellizzer, F.}, year={2009}, month=dec, pages={1–4} }