Crossref proceedings-article
IEEE
2009 IEEE International Electron Devices Meeting (IEDM) (263)
Bibliography

Annunziata, R., Zuliani, P., Borghi, M., De Sandre, G., Scotti, L., Prelini, C., Tosi, M., Tortorelli, I., & Pellizzer, F. (2009). Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond. 2009 IEEE International Electron Devices Meeting (IEDM), 1–4.

Authors 9
  1. R. Annunziata (first)
  2. P. Zuliani (additional)
  3. M. Borghi (additional)
  4. G. De Sandre (additional)
  5. L. Scotti (additional)
  6. C. Prelini (additional)
  7. M. Tosi (additional)
  8. I. Tortorelli (additional)
  9. F. Pellizzer (additional)
References 4 Referenced 40
  1. 10.1109/ESSCIRC.2008.4681826
  2. {'key': 'ref3', 'article-title': 'Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond', 'author': 'pirovano', 'year': '2007', 'journal-title': 'Proc ESSDERC'} / Proc ESSDERC / Self-Aligned uTrench Phase-Change Memory Cell Architecture for 90nm Technology and Beyond by pirovano (2007)
  3. 10.1109/VLSIT.2006.1705247
  4. 10.1109/IEDM.2003.1269271
Dates
Type When
Created 15 years, 4 months ago (March 30, 2010, 3:44 p.m.)
Deposited 8 years, 5 months ago (March 19, 2017, 12:25 a.m.)
Indexed 1 month, 2 weeks ago (July 6, 2025, 7 p.m.)
Issued 15 years, 8 months ago (Dec. 1, 2009)
Published 15 years, 8 months ago (Dec. 1, 2009)
Published Print 15 years, 8 months ago (Dec. 1, 2009)
Funders 0

None

@inproceedings{Annunziata_2009, title={Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond}, url={http://dx.doi.org/10.1109/iedm.2009.5424413}, DOI={10.1109/iedm.2009.5424413}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Annunziata, R. and Zuliani, P. and Borghi, M. and De Sandre, G. and Scotti, L. and Prelini, C. and Tosi, M. and Tortorelli, I. and Pellizzer, F.}, year={2009}, month=dec, pages={1–4} }