DOI: 10.1109/iedm.2009.5424411. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity

10.1109/iedm.2009.5424411

Crossref proceedings-article

IEEE

2009 IEEE International Electron Devices Meeting (IEDM) (263)

Bibliography

Chen, Y. S., Lee, H. Y., Chen, P. S., Gu, P. Y., Chen, C. W., Lin, W. P., Liu, W. H., Hsu, Y. Y., Sheu, S. S., Chiang, P. C., Chen, W. S., Chen, F. T., Lien, C. H., & Tsai, M.-J. (2009). Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. 2009 IEEE International Electron Devices Meeting (IEDM), 1â4.

Authors 14

Y. S. Chen (first)
H. Y. Lee (additional)
P. S. Chen (additional)
P. Y. Gu (additional)
C. W. Chen (additional)
W. P. Lin (additional)
W. H. Liu (additional)
Y. Y. Hsu (additional)
S. S. Sheu (additional)
P. C. Chiang (additional)
W. S. Chen (additional)
F. T. Chen (additional)
C. H. Lien (additional)
M.-J. Tsai (additional)

References 5 Referenced 160

10.1063/1.2749846
10.1063/1.2822420
10.1109/TED.2002.805612
{'key': 'ref2', 'first-page': '82', 'article-title': 'A 5ns fast write multi-level non-volatile 1K bits RRAM memory with advance write scheme', 'author': 'sheu', 'year': '2009', 'journal-title': 'Symp on VLSI Circuits'} / Symp on VLSI Circuits / A 5ns fast write multi-level non-volatile 1K bits RRAM memory with advance write scheme by sheu (2009)
10.1109/IEDM.2008.4796677

Dates

Type	When
Created	15 years, 4 months ago (March 30, 2010, 11:44 a.m.)
Deposited	8 years, 5 months ago (March 18, 2017, 8:17 p.m.)
Indexed	4 months, 1 week ago (April 9, 2025, 5:02 p.m.)
Issued	15 years, 8 months ago (Dec. 1, 2009)
Published	15 years, 8 months ago (Dec. 1, 2009)
Published Print	15 years, 8 months ago (Dec. 1, 2009)

Funders 0

None

BibTeX

@inproceedings{Chen_2009, title={Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity}, url={http://dx.doi.org/10.1109/iedm.2009.5424411}, DOI={10.1109/iedm.2009.5424411}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Chen, Y. S. and Lee, H. Y. and Chen, P. S. and Gu, P. Y. and Chen, C. W. and Lin, W. P. and Liu, W. H. and Hsu, Y. Y. and Sheu, S. S. and Chiang, P. C. and Chen, W. S. and Chen, F. T. and Lien, C. H. and Tsai, M.-J.}, year={2009}, month=dec, pages={1–4} }

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