Crossref proceedings-article
IEEE
2009 IEEE International Electron Devices Meeting (IEDM) (263)
Bibliography

Servalli, G. (2009). A 45nm generation Phase Change Memory technology. 2009 IEEE International Electron Devices Meeting (IEDM).

Authors 1
  1. G. Servalli (first)
References 4 Referenced 126
  1. 10.1109/LED.2007.910749
  2. {'key': 'ref3', 'first-page': '222', 'author': 'pirovano', 'year': '2007', 'journal-title': "Proc ESSDERC'07"} / Proc ESSDERC'07 by pirovano (2007)
  3. {'key': 'ref2', 'first-page': '122', 'author': 'pellizzer', 'year': '2006', 'journal-title': 'VLSI Symp On Tech'} / VLSI Symp On Tech by pellizzer (2006)
  4. {'key': 'ref1', 'first-page': '18', 'author': 'pellizzer', 'year': '2004', 'journal-title': 'VLSI Symp On Tech'} / VLSI Symp On Tech by pellizzer (2004)
Dates
Type When
Created 15 years, 4 months ago (March 30, 2010, 3:44 p.m.)
Deposited 8 years, 5 months ago (March 19, 2017, 12:20 a.m.)
Indexed 1 month, 2 weeks ago (July 1, 2025, 1:46 a.m.)
Issued 15 years, 8 months ago (Dec. 1, 2009)
Published 15 years, 8 months ago (Dec. 1, 2009)
Published Print 15 years, 8 months ago (Dec. 1, 2009)
Funders 0

None

@inproceedings{Servalli_2009, title={A 45nm generation Phase Change Memory technology}, url={http://dx.doi.org/10.1109/iedm.2009.5424409}, DOI={10.1109/iedm.2009.5424409}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={Servalli, G.}, year={2009}, month=dec }