DOI: 10.1109/iedm.2009.5424263. A stackable cross point Phase Change Memory

A stackable cross point Phase Change Memory

10.1109/iedm.2009.5424263

Crossref proceedings-article

IEEE

2009 IEEE International Electron Devices Meeting (IEDM) (263)

Bibliography

DerChang Kau, Tang, S., Karpov, I. V., Dodge, R., Klehn, B., Kalb, J. A., Strand, J., Diaz, A., Leung, N., Wu, J., Sean Lee, Langtry, T., Kuo-wei Chang, Papagianni, C., Jinwook Lee, Hirst, J., Erra, S., Flores, E., Righos, N., â¦ Spadini, G. (2009). A stackable cross point Phase Change Memory. 2009 IEEE International Electron Devices Meeting (IEDM), 1â4.

Authors 21

DerChang Kau (first)
Stephen Tang (additional)
Ilya V. Karpov (additional)
Rick Dodge (additional)
Brett Klehn (additional)
Johannes A. Kalb (additional)
Jonathan Strand (additional)
Aleshandre Diaz (additional)
Nelson Leung (additional)
Jack Wu (additional)
Sean Lee (additional)
Tim Langtry (additional)
Kuo-wei Chang (additional)
Christina Papagianni (additional)
Jinwook Lee (additional)
Jeremy Hirst (additional)
Swetha Erra (additional)
Eddie Flores (additional)
Nick Righos (additional)
Hernan Castro (additional)
Gianpaolo Spadini (additional)

References 8 Referenced 93

{'key': 'ref4', 'article-title': 'Full integration and reliability evaluation of phase-change RAM based on 0.24?m-CMOS technologies', 'author': 'hwang', 'year': '2003', 'journal-title': 'Symposium on VLSI'} / Symposium on VLSI / Full integration and reliability evaluation of phase-change RAM based on 0.24?m-CMOS technologies by hwang (2003)
{'key': 'ref3', 'article-title': 'An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device', 'author': 'chen', 'year': '0', 'journal-title': 'IEDM Technical Digest'} / IEDM Technical Digest / An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device by chen (0)
10.1109/IEDM.2006.346905
10.1109/VLSIT.2006.1705247
10.1103/RevModPhys.50.209 / Review of Modern Physics / The mechanism of threshold switching in amorphous alloys by david (1978)
{'key': 'ref7', 'article-title': 'Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode', 'author': 'sasago', 'year': '2009', 'journal-title': 'Symposium on VLSI Technology'} / Symposium on VLSI Technology / Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode by sasago (2009)
10.1103/PhysRevLett.21.1450
{'key': 'ref1', 'first-page': '803', 'article-title': 'OUM - A 180 nm non-volatile memory cell element technology for stand alone and embedded applications', 'volume': '36', 'author': 'lai', 'year': '2001', 'journal-title': 'IEDM Technical Digest'} / IEDM Technical Digest / OUM - A 180 nm non-volatile memory cell element technology for stand alone and embedded applications by lai (2001)

Dates

Type	When
Created	15 years, 4 months ago (March 30, 2010, 11:44 a.m.)
Deposited	8 years, 2 months ago (June 18, 2017, 10:42 p.m.)
Indexed	3 weeks, 6 days ago (July 24, 2025, 7:37 a.m.)
Issued	15 years, 8 months ago (Dec. 1, 2009)
Published	15 years, 8 months ago (Dec. 1, 2009)
Published Print	15 years, 8 months ago (Dec. 1, 2009)

Funders 0

None

BibTeX

@inproceedings{DerChang_Kau_2009, title={A stackable cross point Phase Change Memory}, url={http://dx.doi.org/10.1109/iedm.2009.5424263}, DOI={10.1109/iedm.2009.5424263}, booktitle={2009 IEEE International Electron Devices Meeting (IEDM)}, publisher={IEEE}, author={DerChang Kau and Tang, Stephen and Karpov, Ilya V. and Dodge, Rick and Klehn, Brett and Kalb, Johannes A. and Strand, Jonathan and Diaz, Aleshandre and Leung, Nelson and Wu, Jack and Sean Lee and Langtry, Tim and Kuo-wei Chang and Papagianni, Christina and Jinwook Lee and Hirst, Jeremy and Erra, Swetha and Flores, Eddie and Righos, Nick and Castro, Hernan and Spadini, Gianpaolo}, year={2009}, month=dec, pages={1–4} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        24
      ]
    ],
    "date-time": "2025-07-24T11:37:35Z",
    "timestamp": 1753357055366,
    "version": "3.28.0"
  },
  "reference-count": 8,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2009,
        12
      ]
    ]
  },
  "DOI": "10.1109/iedm.2009.5424263",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2010,
        3,
        30
      ]
    ],
    "date-time": "2010-03-30T15:44:20Z",
    "timestamp": 1269963860000
  },
  "page": "1-4",
  "source": "Crossref",
  "is-referenced-by-count": 93,
  "title": "A stackable cross point Phase Change Memory",
  "prefix": "10.1109",
  "author": [
    {
      "family": "DerChang Kau",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Stephen",
      "family": "Tang",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Ilya V.",
      "family": "Karpov",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Rick",
      "family": "Dodge",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Brett",
      "family": "Klehn",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Johannes A.",
      "family": "Kalb",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Jonathan",
      "family": "Strand",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Aleshandre",
      "family": "Diaz",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Nelson",
      "family": "Leung",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Jack",
      "family": "Wu",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Sean Lee",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Tim",
      "family": "Langtry",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Kuo-wei Chang",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Christina",
      "family": "Papagianni",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Jinwook Lee",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Jeremy",
      "family": "Hirst",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Swetha",
      "family": "Erra",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Eddie",
      "family": "Flores",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Nick",
      "family": "Righos",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Hernan",
      "family": "Castro",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Gianpaolo",
      "family": "Spadini",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "article-title": "Full integration and reliability evaluation of phase-change RAM based on 0.24?m-CMOS technologies",
      "author": "hwang",
      "year": "2003",
      "journal-title": "Symposium on VLSI"
    },
    {
      "key": "ref3",
      "article-title": "An access-transistor-free (0T/1R) non-volatile resistance random access memory (RRAM) using a novel threshold switching, self-rectifying chalcogenide device",
      "author": "chen",
      "year": "0",
      "journal-title": "IEDM Technical Digest"
    },
    {
      "key": "ref6",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/IEDM.2006.346905"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/VLSIT.2006.1705247"
    },
    {
      "key": "ref8",
      "doi-asserted-by": "crossref",
      "first-page": "209",
      "DOI": "10.1103/RevModPhys.50.209",
      "article-title": "The mechanism of threshold switching in amorphous alloys",
      "volume": "50",
      "author": "david",
      "year": "1978",
      "journal-title": "Review of Modern Physics"
    },
    {
      "key": "ref7",
      "article-title": "Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode",
      "author": "sasago",
      "year": "2009",
      "journal-title": "Symposium on VLSI Technology"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevLett.21.1450"
    },
    {
      "key": "ref1",
      "first-page": "803",
      "article-title": "OUM - A 180 nm non-volatile memory cell element technology for stand alone and embedded applications",
      "volume": "36",
      "author": "lai",
      "year": "2001",
      "journal-title": "IEDM Technical Digest"
    }
  ],
  "event": "2009 IEEE International Electron Devices Meeting (IEDM)",
  "container-title": "2009 IEEE International Electron Devices Meeting (IEDM)",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424263.pdf?arnumber=5424263",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        6,
        19
      ]
    ],
    "date-time": "2017-06-19T02:42:14Z",
    "timestamp": 1497840134000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/5424263/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2009,
        12
      ]
    ]
  },
  "references-count": 8,
  "URL": "http://dx.doi.org/10.1109/IEDM.2009.5424263",
  "relation": {},
  "subject": [],
  "published": {
    "date-parts": [
      [
        2009,
        12
      ]
    ]
  }
}