Bibliography
Liu, F., Yu, R. R., Young, A. M., Doyle, J. P., Wang, X., Shi, L., Chen, K.-N., Li, X., Dipaola, D. A., Brown, D., Ryan, C. T., Hagan, J. A., Wong, K. H., Lu, M., Gu, X., Klymko, N. R., Perfecto, E. D., Merryman, A. G., Kelly, K. A., ⦠Haensch, W. (2008). A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding. 2008 IEEE International Electron Devices Meeting, 1â4.
Authors
23
- F. Liu (first)
- R. R. Yu (additional)
- A. M. Young (additional)
- J. P. Doyle (additional)
- X. Wang (additional)
- L. Shi (additional)
- K.-N. Chen (additional)
- X. Li (additional)
- D. A. Dipaola (additional)
- D. Brown (additional)
- C. T. Ryan (additional)
- J. A. Hagan (additional)
- K. H. Wong (additional)
- M. Lu (additional)
- X. Gu (additional)
- N. R. Klymko (additional)
- E. D. Perfecto (additional)
- A. G. Merryman (additional)
- K. A. Kelly (additional)
- S. Purushothaman (additional)
- S. J. Koester (additional)
- R. Wisnieff (additional)
- W. Haensch (additional)
References
5
Referenced
76
{'journal-title': 'International Interconnect Technology Conference(IITC)', 'year': '2008', 'author': 'tu', 'key': '3'}
/ International Interconnect Technology Conference(IITC) by tu (2008){'journal-title': 'International Electron Devices Meeting (IEDM)', 'year': '2006', 'author': 'swinnen', 'key': '2'}
/ International Electron Devices Meeting (IEDM) by swinnen (2006){'journal-title': 'Proceedings of the UC Berkeley Extension Advanced Metallization Conference (AMC)', 'year': '2004', 'author': 'morrow', 'key': '1'}
/ Proceedings of the UC Berkeley Extension Advanced Metallization Conference (AMC) by morrow (2004){'year': '0', 'key': '5'}
(0){'year': '0', 'key': '4'}
(0)
Dates
Type | When |
---|---|
Created | 16 years, 5 months ago (March 6, 2009, 8:35 a.m.) |
Deposited | 8 years, 5 months ago (March 17, 2017, 7:29 p.m.) |
Indexed | 2 months, 2 weeks ago (June 4, 2025, 2:05 a.m.) |
Issued | 16 years, 8 months ago (Dec. 1, 2008) |
Published | 16 years, 8 months ago (Dec. 1, 2008) |
Published Print | 16 years, 8 months ago (Dec. 1, 2008) |
@inproceedings{Liu_2008, title={A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding}, url={http://dx.doi.org/10.1109/iedm.2008.4796762}, DOI={10.1109/iedm.2008.4796762}, booktitle={2008 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Liu, F. and Yu, R. R. and Young, A. M. and Doyle, J. P. and Wang, X. and Shi, L. and Chen, K.-N. and Li, X. and Dipaola, D. A. and Brown, D. and Ryan, C. T. and Hagan, J. A. and Wong, K. H. and Lu, M. and Gu, X. and Klymko, N. R. and Perfecto, E. D. and Merryman, A. G. and Kelly, K. A. and Purushothaman, S. and Koester, S. J. and Wisnieff, R. and Haensch, W.}, year={2008}, month=dec, pages={1–4} }