Crossref proceedings-article
IEEE
2008 IEEE International Electron Devices Meeting (263)
Bibliography

Liu, F., Yu, R. R., Young, A. M., Doyle, J. P., Wang, X., Shi, L., Chen, K.-N., Li, X., Dipaola, D. A., Brown, D., Ryan, C. T., Hagan, J. A., Wong, K. H., Lu, M., Gu, X., Klymko, N. R., Perfecto, E. D., Merryman, A. G., Kelly, K. A., … Haensch, W. (2008). A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding. 2008 IEEE International Electron Devices Meeting, 1–4.

Authors 23
  1. F. Liu (first)
  2. R. R. Yu (additional)
  3. A. M. Young (additional)
  4. J. P. Doyle (additional)
  5. X. Wang (additional)
  6. L. Shi (additional)
  7. K.-N. Chen (additional)
  8. X. Li (additional)
  9. D. A. Dipaola (additional)
  10. D. Brown (additional)
  11. C. T. Ryan (additional)
  12. J. A. Hagan (additional)
  13. K. H. Wong (additional)
  14. M. Lu (additional)
  15. X. Gu (additional)
  16. N. R. Klymko (additional)
  17. E. D. Perfecto (additional)
  18. A. G. Merryman (additional)
  19. K. A. Kelly (additional)
  20. S. Purushothaman (additional)
  21. S. J. Koester (additional)
  22. R. Wisnieff (additional)
  23. W. Haensch (additional)
References 5 Referenced 76
  1. {'journal-title': 'International Interconnect Technology Conference(IITC)', 'year': '2008', 'author': 'tu', 'key': '3'} / International Interconnect Technology Conference(IITC) by tu (2008)
  2. {'journal-title': 'International Electron Devices Meeting (IEDM)', 'year': '2006', 'author': 'swinnen', 'key': '2'} / International Electron Devices Meeting (IEDM) by swinnen (2006)
  3. {'journal-title': 'Proceedings of the UC Berkeley Extension Advanced Metallization Conference (AMC)', 'year': '2004', 'author': 'morrow', 'key': '1'} / Proceedings of the UC Berkeley Extension Advanced Metallization Conference (AMC) by morrow (2004)
  4. {'year': '0', 'key': '5'} (0)
  5. {'year': '0', 'key': '4'} (0)
Dates
Type When
Created 16 years, 5 months ago (March 6, 2009, 8:35 a.m.)
Deposited 8 years, 5 months ago (March 17, 2017, 7:29 p.m.)
Indexed 2 months, 2 weeks ago (June 4, 2025, 2:05 a.m.)
Issued 16 years, 8 months ago (Dec. 1, 2008)
Published 16 years, 8 months ago (Dec. 1, 2008)
Published Print 16 years, 8 months ago (Dec. 1, 2008)
Funders 0

None

@inproceedings{Liu_2008, title={A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding}, url={http://dx.doi.org/10.1109/iedm.2008.4796762}, DOI={10.1109/iedm.2008.4796762}, booktitle={2008 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Liu, F. and Yu, R. R. and Young, A. M. and Doyle, J. P. and Wang, X. and Shi, L. and Chen, K.-N. and Li, X. and Dipaola, D. A. and Brown, D. and Ryan, C. T. and Hagan, J. A. and Wong, K. H. and Lu, M. and Gu, X. and Klymko, N. R. and Perfecto, E. D. and Merryman, A. G. and Kelly, K. A. and Purushothaman, S. and Koester, S. J. and Wisnieff, R. and Haensch, W.}, year={2008}, month=dec, pages={1–4} }