Crossref
proceedings-article
IEEE
2008 IEEE International Electron Devices Meeting (263)
References
4
Referenced
57
10.1109/TED.2007.911630
10.1109/VLSIT.2007.4339744
10.1109/.2005.1469226
{'key': '4', 'first-page': '907', 'article-title': 'highly manufacturable high density phase change memory of 64mb and beyond', 'author': 'ahn', 'year': '2004', 'journal-title': 'IEDM Tech Dig'}
/ IEDM Tech Dig / highly manufacturable high density phase change memory of 64mb and beyond by ahn (2004)
Dates
Type | When |
---|---|
Created | 16 years, 5 months ago (March 6, 2009, 8:35 a.m.) |
Deposited | 8 years, 5 months ago (March 17, 2017, 7:29 p.m.) |
Indexed | 1 month, 3 weeks ago (June 27, 2025, 12:45 a.m.) |
Issued | 17 years, 7 months ago (Jan. 1, 2008) |
Published | 17 years, 7 months ago (Jan. 1, 2008) |
Published Print | 17 years, 7 months ago (Jan. 1, 2008) |
@inproceedings{Im_2008, title={A unified 7.5nm dash-type confined cell for high performance PRAM device}, url={http://dx.doi.org/10.1109/iedm.2008.4796654}, DOI={10.1109/iedm.2008.4796654}, booktitle={2008 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Im, D.H. and Lee, J. I. and Cho, S.L. and An, H.G. and Kim, D.H. and Kim, I.S. and Park, H. and Ahn, D.H. and Horii, H. and Park, S.O. and Chung, U-In and Moon, J.T.}, year={2008}, pages={1–4} }