DOI: 10.1109/iedm.2007.4419041. Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow

Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow

10.1109/iedm.2007.4419041

Crossref proceedings-article

IEEE

2007 IEEE International Electron Devices Meeting (263)

Bibliography

Takahashi, T., Nishimura, T., Chen, L., Sakata, S., Kita, K., & Toriumi, A. (2007). Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow. 2007 IEEE International Electron Devices Meeting, 697â700.

Authors 6

T. Takahashi (first)
T. Nishimura (additional)
L. Chen (additional)
S. Sakata (additional)
K. Kita (additional)
A. Toriumi (additional)

References 8 Referenced 24

{'key': 'ref4', 'volume': '91', 'author': 'nishimura', 'year': '2007', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett by nishimura (2007)
10.1063/1.2420794
{'key': 'ref6', 'first-page': '437', 'author': 'chui', 'year': '2002', 'journal-title': 'IEDM'} / IEDM by chui (2002)
{'key': 'ref5', 'first-page': '655', 'author': 'zimmerman', 'year': '2006', 'journal-title': 'IEDM'} / IEDM by zimmerman (2006)
10.1063/1.2159096 / Appl Phys Lett by connelly (2006)
{'key': 'ref7', 'first-page': '441', 'author': 'kamata', 'year': '2005', 'journal-title': 'IEDM'} / IEDM by kamata (2005)
{'key': 'ref2', 'first-page': '858', 'author': 'nomura', 'year': '2005', 'journal-title': 'SSDM'} / SSDM by nomura (2005)
{'key': 'ref1', 'volume': '85', 'author': 'kita', 'year': '2004', 'journal-title': 'Appl Phys Lett'} / Appl Phys Lett by kita (2004)

Dates

Type	When
Created	17 years, 7 months ago (Jan. 4, 2008, 4:06 p.m.)
Deposited	4 months, 2 weeks ago (April 2, 2025, 1:45 p.m.)
Indexed	3 months, 3 weeks ago (April 30, 2025, 3:06 a.m.)
Issued	17 years, 8 months ago (Dec. 1, 2007)
Published	17 years, 8 months ago (Dec. 1, 2007)
Published Print	17 years, 8 months ago (Dec. 1, 2007)

Funders 0

None

BibTeX

@inproceedings{Takahashi_2007, title={Proof of Ge-interfacing Concepts for Metal/High-k/Ge CMOS - Ge-intimate Material Selection and Interface Conscious Process Flow}, url={http://dx.doi.org/10.1109/iedm.2007.4419041}, DOI={10.1109/iedm.2007.4419041}, booktitle={2007 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Takahashi, T. and Nishimura, T. and Chen, L. and Sakata, S. and Kita, K. and Toriumi, A.}, year={2007}, month=dec, pages={697–700} }

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