DOI: 10.1109/iedm.2006.346910. Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

Ultra-Thin Phase-Change Bridge Memory Device Using GeSb

10.1109/iedm.2006.346910

Crossref proceedings-article

IEEE

2006 International Electron Devices Meeting (263)

Bibliography

Chen, Y. C., Rettner, C. T., Raoux, S., Burr, G. W., Chen, S. H., Shelby, R. M., Salinga, M., Risk, W. P., Happ, T. D., McClelland, G. M., Breitwisch, M., Schrott, A., Philipp, J. B., Lee, M. H., Cheek, R., Nirschl, T., Lamorey, M., Chen, C. F., Joseph, E., â¦ Lam, C. (2006). Ultra-Thin Phase-Change Bridge Memory Device Using GeSb. 2006 International Electron Devices Meeting.

Authors 24

Y. C. Chen (first)
C. T. Rettner (additional)
S. Raoux (additional)
G. W. Burr (additional)
S. H. Chen (additional)
R. M. Shelby (additional)
M. Salinga (additional)
W. P. Risk (additional)
T. D. Happ (additional)
G. M. McClelland (additional)
M. Breitwisch (additional)
A. Schrott (additional)
J. B. Philipp (additional)
M. H. Lee (additional)
R. Cheek (additional)
T. Nirschl (additional)
M. Lamorey (additional)
C. F. Chen (additional)
E. Joseph (additional)
S. Zaidi (additional)
B. Yee (additional)
H. L. Lung (additional)
R. Bergmann (additional)
C. Lam (additional)

References 4 Referenced 100

10.1063/1.1604172
{'key': 'ref3', 'first-page': '15', 'author': 'happ', 'year': '2006', 'journal-title': 'Symp VLSI Tech'} / Symp VLSI Tech by happ (2006)
10.1038/nmat1350
{'key': 'ref1', 'first-page': '803', 'author': 'lai', 'year': '0', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest by lai (0)

Dates

Type	When
Created	18 years, 3 months ago (April 24, 2007, 4:05 p.m.)
Deposited	7 years, 2 months ago (June 11, 2018, 7:26 p.m.)
Indexed	3 months, 3 weeks ago (April 29, 2025, 12:45 a.m.)
Issued	18 years, 8 months ago (Dec. 1, 2006)
Published	18 years, 8 months ago (Dec. 1, 2006)
Published Print	18 years, 8 months ago (Dec. 1, 2006)

Funders 0

None

BibTeX

@inproceedings{Chen_2006, title={Ultra-Thin Phase-Change Bridge Memory Device Using GeSb}, url={http://dx.doi.org/10.1109/iedm.2006.346910}, DOI={10.1109/iedm.2006.346910}, booktitle={2006 International Electron Devices Meeting}, publisher={IEEE}, author={Chen, Y. C. and Rettner, C. T. and Raoux, S. and Burr, G. W. and Chen, S. H. and Shelby, R. M. and Salinga, M. and Risk, W. P. and Happ, T. D. and McClelland, G. M. and Breitwisch, M. and Schrott, A. and Philipp, J. B. and Lee, M. H. and Cheek, R. and Nirschl, T. and Lamorey, M. and Chen, C. F. and Joseph, E. and Zaidi, S. and Yee, B. and Lung, H. L. and Bergmann, R. and Lam, C.}, year={2006}, month=dec }

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