DOI: 10.1109/iedm.2006.346905. Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

10.1109/iedm.2006.346905

Crossref proceedings-article

IEEE

2006 International Electron Devices Meeting (263)

Bibliography

Oh, J. H., Park, J. H., Lim, Y. S., Lim, H. S., Oh, Y. T., Kim, J. S., Shin, J. M., Park, J. H., Song, Y. J., Ryoo, K. C., Lim, D. W., Park, S. S., Kim, J. I., Kim, J. H., Yu, J., Yeung, F., Jeong, C. W., Kong, J. H., Kang, D. H., â¦ Kim, K. (2006). Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology. 2006 International Electron Devices Meeting, 1â4.

Authors 23

J.H. Oh (first)
J.H. Park (additional)
Y.S. Lim (additional)
H.S. Lim (additional)
Y.T. Oh (additional)
J.S. Kim (additional)
J.M. Shin (additional)
J.H. Park (additional)
Y.J. Song (additional)
K.C. Ryoo (additional)
D.W. Lim (additional)
S.S. Park (additional)
J.I. Kim (additional)
J.H. Kim (additional)
J. Yu (additional)
F. Yeung (additional)
C.W. Jeong (additional)
J.H. Kong (additional)
D.H. Kang (additional)
G.H. Koh (additional)
G.T. Jeong (additional)
H.S. Jeong (additional)
Kinam Kim (additional)

References 3 Referenced 88

{'key': 'ref3', 'volume': '146', 'author': 'song', 'year': '2006', 'journal-title': 'Proceedings of VLSI'} / Proceedings of VLSI by song (2006)
{'key': 'ref2', 'volume': '98', 'author': 'ahn', 'year': '2005', 'journal-title': 'Proceedings of VLSI'} / Proceedings of VLSI by ahn (2005)
{'journal-title': 'IEDM Tech Dig', 'year': '2003', 'author': 'lai', 'key': 'ref1'} / IEDM Tech Dig by lai (2003)

Dates

Type	When
Created	18 years, 3 months ago (April 24, 2007, 4:05 p.m.)
Deposited	7 years, 3 months ago (May 18, 2018, 5:50 p.m.)
Indexed	1 month, 2 weeks ago (July 6, 2025, 7 p.m.)
Issued	18 years, 8 months ago (Dec. 1, 2006)
Published	18 years, 8 months ago (Dec. 1, 2006)
Published Print	18 years, 8 months ago (Dec. 1, 2006)

Funders 0

None

BibTeX

@inproceedings{Oh_2006, title={Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology}, url={http://dx.doi.org/10.1109/iedm.2006.346905}, DOI={10.1109/iedm.2006.346905}, booktitle={2006 International Electron Devices Meeting}, publisher={IEEE}, author={Oh, J.H. and Park, J.H. and Lim, Y.S. and Lim, H.S. and Oh, Y.T. and Kim, J.S. and Shin, J.M. and Park, J.H. and Song, Y.J. and Ryoo, K.C. and Lim, D.W. and Park, S.S. and Kim, J.I. and Kim, J.H. and Yu, J. and Yeung, F. and Jeong, C.W. and Kong, J.H. and Kang, D.H. and Koh, G.H. and Jeong, G.T. and Jeong, H.S. and Kim, Kinam}, year={2006}, month=dec, pages={1–4} }

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