DOI: 10.1109/iedm.2006.346881. Challenges and Opportunities for High Performance 32 nm CMOS Technology

Challenges and Opportunities for High Performance 32 nm CMOS Technology

10.1109/iedm.2006.346881

Crossref proceedings-article

IEEE

2006 International Electron Devices Meeting (263)

Bibliography

Sleight, J. W., Lauer, I., Dokumaci, O., Fried, D. M., Guo, D., Haran, B., Narasimha, S., Sheraw, C., Singh, D., Steigerwalt, M., Wang, X., Oldiges, P., Sadana, D., Sung, C. Y., Haensch, W., & Khare, M. (2006). Challenges and Opportunities for High Performance 32 nm CMOS Technology. 2006 International Electron Devices Meeting, 1â4.

Authors 16

J. W. Sleight (first)
I. Lauer (additional)
O. Dokumaci (additional)
D. M. Fried (additional)
D. Guo (additional)
B. Haran (additional)
S. Narasimha (additional)
C. Sheraw (additional)
D. Singh (additional)
M. Steigerwalt (additional)
X. Wang (additional)
P. Oldiges (additional)
D. Sadana (additional)
C.Y. Sung (additional)
W. Haensch (additional)
M. Khare (additional)

References 4 Referenced 33

{'journal-title': 'IEDM', 'year': '2002', 'author': 'na', 'key': 'ref4'} / IEDM by na (2002)
{'key': 'ref3', 'first-page': '224', 'author': 'narayanan', 'year': '2006', 'journal-title': 'VLSI'} / VLSI by narayanan (2006)
{'key': 'ref2', 'first-page': '2047', 'author': 'rossnagel', 'year': '2002', 'journal-title': 'JVST B'} / JVST B by rossnagel (2002)
{'journal-title': '6 6 IEDM', 'year': '2005', 'author': 'kim', 'key': 'ref1'} / 6 6 IEDM by kim (2005)

Dates

Type	When
Created	18 years, 3 months ago (April 24, 2007, 4:05 p.m.)
Deposited	8 years, 5 months ago (March 15, 2017, 5:04 p.m.)
Indexed	3 months ago (May 21, 2025, 1:52 a.m.)
Issued	19 years, 7 months ago (Jan. 1, 2006)
Published	19 years, 7 months ago (Jan. 1, 2006)
Published Print	19 years, 7 months ago (Jan. 1, 2006)

Funders 0

None

BibTeX

@inproceedings{Sleight_2006, title={Challenges and Opportunities for High Performance 32 nm CMOS Technology}, url={http://dx.doi.org/10.1109/iedm.2006.346881}, DOI={10.1109/iedm.2006.346881}, booktitle={2006 International Electron Devices Meeting}, publisher={IEEE}, author={Sleight, J. W. and Lauer, I. and Dokumaci, O. and Fried, D. M. and Guo, D. and Haran, B. and Narasimha, S. and Sheraw, C. and Singh, D. and Steigerwalt, M. and Wang, X. and Oldiges, P. and Sadana, D. and Sung, C.Y. and Haensch, W. and Khare, M.}, year={2006}, pages={1–4} }

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