DOI: 10.1109/iedm.2006.346733. Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

10.1109/iedm.2006.346733

Crossref proceedings-article

IEEE

2006 International Electron Devices Meeting (263)

Bibliography

Lee, D., Seong, D., Choi, H. jung, Jo, I., Dong, R., Xiang, W., Oh, S., Pyun, M., Seo, S., Heo, S., Jo, M., Hwang, D.-K., Park, H. K., Chang, M., Hasan, M., & Hwang, H. (2006). Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications. 2006 International Electron Devices Meeting, 1â4.

Authors 16

Dongsoo Lee (first)
Dong-jun Seong (additional)
Hye jung Choi (additional)
Inhwa Jo (additional)
R. Dong (additional)
W. Xiang (additional)
Seokjoon Oh (additional)
Myeongbum Pyun (additional)
Sun-ok Seo (additional)
Seongho Heo (additional)
Minseok Jo (additional)
Dae-Kyu Hwang (additional)
H. K Park (additional)
M. Chang (additional)
M. Hasan (additional)
Hyunsang Hwang (additional)

References 7 Referenced 48

10.1109/IEDM.2005.1609461
10.1063/1.1389522
10.1109/TNANO.2005.846936
{'key': 'ref5', 'first-page': '777', 'article-title': 'Excellent Resistance Switching Characteristics of Pt/SrTiO3 Schottky Junction for Multi-bit Nonvolatile memory Application', 'author': 'hyunjun', 'year': '2005', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Excellent Resistance Switching Characteristics of Pt/SrTiO3 Schottky Junction for Multi-bit Nonvolatile memory Application by hyunjun (2005)
{'key': 'ref7', 'first-page': '773', 'article-title': 'Conductibe bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20nm', 'author': 'michael', 'year': '2005', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Conductibe bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20nm by michael (2005)
{'key': 'ref2', 'first-page': '193', 'article-title': 'Novell Crossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory', 'author': 'zhuang', 'year': '2002', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Novell Crossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory by zhuang (2002)
10.1109/IEDM.2004.1419228

Dates

Type	When
Created	18 years, 3 months ago (April 24, 2007, 12:05 p.m.)
Deposited	8 years, 5 months ago (March 15, 2017, 2:40 p.m.)
Indexed	2 months, 3 weeks ago (May 31, 2025, 6:42 p.m.)
Issued	19 years, 7 months ago (Jan. 1, 2006)
Published	19 years, 7 months ago (Jan. 1, 2006)
Published Print	19 years, 7 months ago (Jan. 1, 2006)

Funders 0

None

BibTeX

@inproceedings{Lee_2006, title={Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications}, url={http://dx.doi.org/10.1109/iedm.2006.346733}, DOI={10.1109/iedm.2006.346733}, booktitle={2006 International Electron Devices Meeting}, publisher={IEEE}, author={Lee, Dongsoo and Seong, Dong-jun and Choi, Hye jung and Jo, Inhwa and Dong, R. and Xiang, W. and Oh, Seokjoon and Pyun, Myeongbum and Seo, Sun-ok and Heo, Seongho and Jo, Minseok and Hwang, Dae-Kyu and Park, H. K and Chang, M. and Hasan, M. and Hwang, Hyunsang}, year={2006}, pages={1–4} }

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