DOI: 10.1109/iedm.2003.1269422. Writing current reduction for high-density phase-change RAM

Writing current reduction for high-density phase-change RAM

10.1109/iedm.2003.1269422

Crossref proceedings-article

IEEE

IEEE International Electron Devices Meeting 2003 (263)

Bibliography

Hwang, Y. N., Lee, S. H., Ahn, S. J., Lee, S. Y., Ryoo, K. C., Hong, H. S., Koo, H. C., Yeung, F., Oh, J. H., Kim, H. J., Jeong, W. C., Park, J. H., Horii, H., Ha, Y. H., Yi, J. H., Koh, G. H., Jeong, G. T., Jeong, H. S., & Kinam Kim. (n.d.). Writing current reduction for high-density phase-change RAM. IEEE International Electron Devices Meeting 2003, 37.1.1-37.1.4.

Authors 19

Y.N. Hwang (first)
S.H. Lee (additional)
S.J. Ahn (additional)
S.Y. Lee (additional)
K.C. Ryoo (additional)
H.S. Hong (additional)
H.C. Koo (additional)
F. Yeung (additional)
J.H. Oh (additional)
H.J. Kim (additional)
W.C. Jeong (additional)
J.H. Park (additional)
H. Horii (additional)
Y.H. Ha (additional)
J.H. Yi (additional)
G.H. Koh (additional)
G.T. Jeong (additional)
H.S. Jeong (additional)
Kinam Kim (additional)

References 2 Referenced 38

{'key': 'ref2', 'article-title': 'Full Integration and Reliability Evaluation of Phase-Change RAM Based on 0.24um-CMOS technologies', 'author': 'hwang', 'year': '2003', 'journal-title': 'Proceedings of VLSl Teechnology'} / Proceedings of VLSl Teechnology / Full Integration and Reliability Evaluation of Phase-Change RAM Based on 0.24um-CMOS technologies by hwang (2003)
{'key': 'ref1', 'first-page': '67', 'article-title': 'Amorphous nonvolatile memory: the past and the future', 'author': 'neale', 'year': '2001', 'journal-title': 'Electronic Engineering'} / Electronic Engineering / Amorphous nonvolatile memory: the past and the future by neale (2001)

Dates

Type	When
Created	21 years, 5 months ago (March 22, 2004, 4:34 a.m.)
Deposited	8 years, 5 months ago (March 13, 2017, 5:13 p.m.)
Indexed	2 months, 1 week ago (June 11, 2025, 3:29 a.m.)

Funders 0

None

BibTeX

@inproceedings{Hwang, series={IEDM-03}, title={Writing current reduction for high-density phase-change RAM}, url={http://dx.doi.org/10.1109/iedm.2003.1269422}, DOI={10.1109/iedm.2003.1269422}, booktitle={IEEE International Electron Devices Meeting 2003}, publisher={IEEE}, author={Hwang, Y.N. and Lee, S.H. and Ahn, S.J. and Lee, S.Y. and Ryoo, K.C. and Hong, H.S. and Koo, H.C. and Yeung, F. and Oh, J.H. and Kim, H.J. and Jeong, W.C. and Park, J.H. and Horii, H. and Ha, Y.H. and Yi, J.H. and Koh, G.H. and Jeong, G.T. and Jeong, H.S. and Kinam Kim}, pages={37.1.1-37.1.4}, collection={IEDM-03} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        11
      ]
    ],
    "date-time": "2025-06-11T07:29:00Z",
    "timestamp": 1749626940260
  },
  "reference-count": 2,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1109/iedm.2003.1269422",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2004,
        3,
        22
      ]
    ],
    "date-time": "2004-03-22T09:34:28Z",
    "timestamp": 1079948068000
  },
  "page": "37.1.1-37.1.4",
  "source": "Crossref",
  "is-referenced-by-count": 38,
  "title": "Writing current reduction for high-density phase-change RAM",
  "prefix": "10.1109",
  "author": [
    {
      "given": "Y.N.",
      "family": "Hwang",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "S.H.",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "S.J.",
      "family": "Ahn",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "S.Y.",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "K.C.",
      "family": "Ryoo",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.S.",
      "family": "Hong",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.C.",
      "family": "Koo",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "F.",
      "family": "Yeung",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.H.",
      "family": "Oh",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.J.",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "W.C.",
      "family": "Jeong",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.H.",
      "family": "Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.",
      "family": "Horii",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Y.H.",
      "family": "Ha",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.H.",
      "family": "Yi",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.H.",
      "family": "Koh",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.T.",
      "family": "Jeong",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.S.",
      "family": "Jeong",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Kinam Kim",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref2",
      "article-title": "Full Integration and Reliability Evaluation of Phase-Change RAM Based on 0.24um-CMOS technologies",
      "author": "hwang",
      "year": "2003",
      "journal-title": "Proceedings of VLSl Teechnology"
    },
    {
      "key": "ref1",
      "first-page": "67",
      "article-title": "Amorphous nonvolatile memory: the past and the future",
      "author": "neale",
      "year": "2001",
      "journal-title": "Electronic Engineering"
    }
  ],
  "event": "IEEE International Electron Devices Meeting 2003",
  "container-title": "IEEE International Electron Devices Meeting 2003",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx5/8960/28396/01269422.pdf?arnumber=1269422",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        3,
        13
      ]
    ],
    "date-time": "2017-03-13T21:13:13Z",
    "timestamp": 1489439593000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/1269422/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        null
      ]
    ]
  },
  "references-count": 2,
  "URL": "http://dx.doi.org/10.1109/IEDM.2003.1269422",
  "relation": {},
  "subject": []
}