DOI: 10.1109/iedm.2001.979636. OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications

10.1109/iedm.2001.979636

Crossref proceedings-article

IEEE

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (263)

Bibliography

Lai, S., & Lowrey, T. (n.d.). OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications. International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 36.5.1-36.5.4.

Authors 2

S. Lai (first)
T. Lowrey (additional)

References 4 Referenced 149

{'journal-title': 'A comprehensive model of submicron chalcogenide switching devices', 'year': '1996', 'author': 'wicker', 'key': 'ref4'} / A comprehensive model of submicron chalcogenide switching devices by wicker (1996)
{'key': 'ref3', 'first-page': '2', 'article-title': 'Nonvolatile, high density, high performance phase change memory', 'volume': '3891', 'author': 'wicker', 'year': '1999', 'journal-title': 'SPIE'} / SPIE / Nonvolatile, high density, high performance phase change memory by wicker (1999)
10.1063/1.348620
{'key': 'ref1', 'first-page': '56', 'article-title': 'Nonvolatile and reprogrammable, the read-mostly memory is here', 'author': 'neale', 'year': '1970', 'journal-title': 'Electronics'} / Electronics / Nonvolatile and reprogrammable, the read-mostly memory is here by neale (1970)

Dates

Type	When
Created	22 years, 9 months ago (Nov. 13, 2002, 1:28 p.m.)
Deposited	8 years, 5 months ago (March 10, 2017, 11:36 a.m.)
Indexed	1 month, 2 weeks ago (July 1, 2025, 7:42 p.m.)

Funders 0

None

BibTeX

@inproceedings{Lai, series={IEDM-01}, title={OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications}, url={http://dx.doi.org/10.1109/iedm.2001.979636}, DOI={10.1109/iedm.2001.979636}, booktitle={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)}, publisher={IEEE}, author={Lai, S. and Lowrey, T.}, pages={36.5.1-36.5.4}, collection={IEDM-01} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        1
      ]
    ],
    "date-time": "2025-07-01T23:42:07Z",
    "timestamp": 1751413327697,
    "version": "3.28.0"
  },
  "reference-count": 4,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1109/iedm.2001.979636",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2002,
        11,
        13
      ]
    ],
    "date-time": "2002-11-13T18:28:47Z",
    "timestamp": 1037212127000
  },
  "page": "36.5.1-36.5.4",
  "source": "Crossref",
  "is-referenced-by-count": 149,
  "title": "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications",
  "prefix": "10.1109",
  "author": [
    {
      "given": "S.",
      "family": "Lai",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "T.",
      "family": "Lowrey",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "journal-title": "A comprehensive model of submicron chalcogenide switching devices",
      "year": "1996",
      "author": "wicker",
      "key": "ref4"
    },
    {
      "key": "ref3",
      "first-page": "2",
      "article-title": "Nonvolatile, high density, high performance phase change memory",
      "volume": "3891",
      "author": "wicker",
      "year": "1999",
      "journal-title": "SPIE"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.348620"
    },
    {
      "key": "ref1",
      "first-page": "56",
      "article-title": "Nonvolatile and reprogrammable, the read-mostly memory is here",
      "author": "neale",
      "year": "1970",
      "journal-title": "Electronics"
    }
  ],
  "event": "International Electron Devices Meeting. Technical Digest",
  "container-title": "International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx5/7704/21092/00979636.pdf?arnumber=979636",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        3,
        10
      ]
    ],
    "date-time": "2017-03-10T16:36:54Z",
    "timestamp": 1489163814000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/979636/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        null
      ]
    ]
  },
  "references-count": 4,
  "URL": "http://dx.doi.org/10.1109/IEDM.2001.979636",
  "relation": {},
  "subject": []
}