Bibliography
Gutsche, M., Seidl, H., Luetzen, J., Birner, A., Hecht, T., Jakschik, S., Kerber, M., Leonhardt, M., Moll, P., Pompl, T., Reisinger, H., Rongen, S., Saenger, A., Schroeder, U., Sell, B., Wahl, A., & Schumann, D. (n.d.). Capacitance enhancement techniques for sub-100 nm trench DRAMs. International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 18.6.1-18.6.4.
Authors
17
- M. Gutsche (first)
- H. Seidl (additional)
- J. Luetzen (additional)
- A. Birner (additional)
- T. Hecht (additional)
- S. Jakschik (additional)
- M. Kerber (additional)
- M. Leonhardt (additional)
- P. Moll (additional)
- T. Pompl (additional)
- H. Reisinger (additional)
- S. Rongen (additional)
- A. Saenger (additional)
- U. Schroeder (additional)
- B. Sell (additional)
- A. Wahl (additional)
- D. Schumann (additional)
References
2
Referenced
14
10.1109/VLSIT.1997.623726{'key': 'ref1', 'first-page': '33', 'author': 'rupp', 'year': '0', 'journal-title': 'IEDM Tech Digest'}/ IEDM Tech Digest by rupp (0)
@inproceedings{Gutsche, series={IEDM-01}, title={Capacitance enhancement techniques for sub-100 nm trench DRAMs}, url={http://dx.doi.org/10.1109/iedm.2001.979524}, DOI={10.1109/iedm.2001.979524}, booktitle={International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)}, publisher={IEEE}, author={Gutsche, M. and Seidl, H. and Luetzen, J. and Birner, A. and Hecht, T. and Jakschik, S. and Kerber, M. and Leonhardt, M. and Moll, P. and Pompl, T. and Reisinger, H. and Rongen, S. and Saenger, A. and Schroeder, U. and Sell, B. and Wahl, A. and Schumann, D.}, pages={18.6.1-18.6.4}, collection={IEDM-01} }