DOI: 10.1109/iedm.1996.553115. Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy

Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy

10.1109/iedm.1996.553115

Crossref proceedings-article

IEEE

International Electron Devices Meeting. Technical Digest (263)

Bibliography

Mizutani, T., Arakawa, M., & Kishimoto, S. (n.d.). Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy. International Electron Devices Meeting. Technical Digest, 31â34.

Authors 3

T. Mizutani (first)
M. Arakawa (additional)
S. Kishimoto (additional)

References 7 Referenced 4

Dates

Type	When
Created	22 years, 7 months ago (Dec. 23, 2002, 6 p.m.)
Deposited	8 years, 5 months ago (March 9, 2017, 5:17 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 6, 2024, 6:15 p.m.)

Funders 0

None

BibTeX

@inproceedings{Mizutani, series={IEDM-96}, title={Potential profile measurement of cleaved surface of GaAs HEMTs by Kelvin probe force microscopy}, url={http://dx.doi.org/10.1109/iedm.1996.553115}, DOI={10.1109/iedm.1996.553115}, booktitle={International Electron Devices Meeting. Technical Digest}, publisher={IEEE}, author={Mizutani, T. and Arakawa, M. and Kishimoto, S.}, pages={31–34}, collection={IEDM-96} }

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