DOI: 10.1109/iedm.1994.383340. Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs

10.1109/iedm.1994.383340

Crossref proceedings-article

IEEE

Proceedings of 1994 IEEE International Electron Devices Meeting (263)

Bibliography

Momose, H. S., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., & Iwai, H. (n.d.). Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs. Proceedings of 1994 IEEE International Electron Devices Meeting, 593â596.

Authors 7

H.S. Momose (first)
M. Ono (additional)
T. Yoshitomi (additional)
T. Ohguro (additional)
S. Nakamura (additional)
M. Saito (additional)
H. Iwai (additional)

References 4 Referenced 54

{'key': 'ref4', 'article-title': 'An ultra-low power 0.1 um CMOS', 'author': 'mii', 'year': '1994', 'journal-title': 'Symp VLSI Technology Dig Tech Papers'} / Symp VLSI Technology Dig Tech Papers / An ultra-low power 0.1 um CMOS by mii (1994)
10.1109/16.106245
{'key': 'ref2', 'first-page': '23', 'article-title': 'Limits on gate insulator thickness for MISFET operation in pure-oxide and nitrided-oxide gate cases', 'author': 'morimoto', 'year': '1991', 'journal-title': 'Extended Abstracts 17th Conf Solid State Device Materials'} / Extended Abstracts 17th Conf Solid State Device Materials / Limits on gate insulator thickness for MISFET operation in pure-oxide and nitrided-oxide gate cases by morimoto (1991)
10.1109/IEDM.1993.347385

Dates

Type	When
Created	22 years, 8 months ago (Dec. 17, 2002, 12:38 p.m.)
Deposited	8 years, 5 months ago (March 8, 2017, 11:36 p.m.)
Indexed	2 months, 1 week ago (June 13, 2025, 1:01 p.m.)

Funders 0

None

BibTeX

@inproceedings{Momose, series={IEDM-94}, title={Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs}, url={http://dx.doi.org/10.1109/iedm.1994.383340}, DOI={10.1109/iedm.1994.383340}, booktitle={Proceedings of 1994 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Momose, H.S. and Ono, M. and Yoshitomi, T. and Ohguro, T. and Nakamura, S. and Saito, M. and Iwai, H.}, pages={593–596}, collection={IEDM-94} }

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