DOI: 10.1109/iedm.1994.383326. Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs

10.1109/iedm.1994.383326

Crossref proceedings-article

IEEE

Proceedings of 1994 IEEE International Electron Devices Meeting (263)

Bibliography

Su, L. T., Hang Hu, Jacobs, J. B., Sherony, M. J., Wei, A., & Antoniadis, D. A. (n.d.). Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs. Proceedings of 1994 IEEE International Electron Devices Meeting, 649â652.

Authors 6

L.T. Su (first)
Hang Hu (additional)
J.B. Jacobs (additional)
M.J. Sherony (additional)
A. Wei (additional)
D.A. Antoniadis (additional)

References 9 Referenced 8

10.1109/EDL.1980.25205
10.1109/VLSIT.1993.760228
10.1109/55.311135
10.1109/16.293306
10.1109/55.311136
{'key': 'ref7', 'first-page': '17', 'author': 'hu', 'year': '1994', 'journal-title': 'Proc VLSI Symp'} / Proc VLSI Symp by hu (1994)
{'key': 'ref2', 'first-page': '1012', 'author': 'taur', 'year': '1993', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by taur (1993)
10.1109/55.6945
{'key': 'ref1', 'first-page': '131', 'author': 'lee', 'year': '1993', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig by lee (1993)

Dates

Type	When
Created	22 years, 8 months ago (Dec. 17, 2002, 12:38 p.m.)
Deposited	8 years, 5 months ago (March 8, 2017, 11:57 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 3, 2024, 8:01 p.m.)

Funders 0

None

BibTeX

@inproceedings{Su, series={IEDM-94}, title={Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs}, url={http://dx.doi.org/10.1109/iedm.1994.383326}, DOI={10.1109/iedm.1994.383326}, booktitle={Proceedings of 1994 IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Su, L.T. and Hang Hu and Jacobs, J.B. and Sherony, M.J. and Wei, A. and Antoniadis, D.A.}, pages={649–652}, collection={IEDM-94} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        9,
        4
      ]
    ],
    "date-time": "2024-09-04T00:01:05Z",
    "timestamp": 1725408065927
  },
  "reference-count": 9,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1109/iedm.1994.383326",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2002,
        12,
        17
      ]
    ],
    "date-time": "2002-12-17T17:38:12Z",
    "timestamp": 1040146692000
  },
  "page": "649-652",
  "source": "Crossref",
  "is-referenced-by-count": 8,
  "title": "Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs",
  "prefix": "10.1109",
  "author": [
    {
      "given": "L.T.",
      "family": "Su",
      "sequence": "first",
      "affiliation": []
    },
    {
      "family": "Hang Hu",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.B.",
      "family": "Jacobs",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "M.J.",
      "family": "Sherony",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "A.",
      "family": "Wei",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "D.A.",
      "family": "Antoniadis",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/EDL.1980.25205"
    },
    {
      "key": "ref3",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/VLSIT.1993.760228"
    },
    {
      "key": "ref6",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.311135"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.293306"
    },
    {
      "key": "ref8",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.311136"
    },
    {
      "key": "ref7",
      "first-page": "17",
      "author": "hu",
      "year": "1994",
      "journal-title": "Proc VLSI Symp"
    },
    {
      "key": "ref2",
      "first-page": "1012",
      "author": "taur",
      "year": "1993",
      "journal-title": "IEDM Tech Dig"
    },
    {
      "key": "ref9",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.6945"
    },
    {
      "key": "ref1",
      "first-page": "131",
      "author": "lee",
      "year": "1993",
      "journal-title": "IEDM Tech Dig"
    }
  ],
  "event": "1994 IEEE International Electron Devices Meeting",
  "container-title": "Proceedings of 1994 IEEE International Electron Devices Meeting",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx2/3058/8678/00383326.pdf?arnumber=383326",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        3,
        9
      ]
    ],
    "date-time": "2017-03-09T04:57:22Z",
    "timestamp": 1489035442000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/383326/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        null
      ]
    ]
  },
  "references-count": 9,
  "URL": "http://dx.doi.org/10.1109/IEDM.1994.383326",
  "relation": {},
  "subject": []
}