DOI: 10.1109/iedm.1993.347323. Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes

Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes

10.1109/iedm.1993.347323

Crossref proceedings-article

IEEE

Proceedings of IEEE International Electron Devices Meeting (263)

Bibliography

Alien, S. T., Reddy, H., Rodwell, M. J. W., Smith, R. P., Martin, S. C., Lui, J., & Muller, R. E. (n.d.). Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes. Proceedings of IEEE International Electron Devices Meeting, 407â410.

Authors 7

S.T. Alien (first)
H. Reddy (additional)
M.J.W. Rodwell (additional)
R.P. Smith (additional)
S.C. Martin (additional)
J. Lui (additional)
R.E. Muller (additional)

References 8 Referenced 9

{'key': 'ref4', 'first-page': '377', 'article-title': 'GaAs Schottky diodes for THz mixing applications', 'author': 'wood', 'year': '1993', 'journal-title': 'Proc Fourth Int Symp Space Terahertz Technol'} / Proc Fourth Int Symp Space Terahertz Technol / GaAs Schottky diodes for THz mixing applications by wood (1993)
{'volume': '58', 'journal-title': 'Hot-Electron Transport in Semiconductors Topics in Applied Physics', 'year': '1985', 'key': 'ref3'} / Hot-Electron Transport in Semiconductors Topics in Applied Physics (1985)
10.1117/12.968521 / Electron-Beam X-Ray and Ion-Beam Technology Submicrometer Lithographies VIII / Electron-beam lithography and resist processing for the fabrication of T-gate structures by tiberio (1989)
10.1117/12.20913 / High-Speed Electronics and Device Scaling / High-speed resonant-tunneling diodes made from the In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/AlAs material system by brown (1990)
10.1063/1.108451
10.1116/1.585946
10.1063/1.102190
10.1063/1.104902

Dates

Type	When
Created	22 years, 7 months ago (Dec. 30, 2002, 11:26 a.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 9:06 a.m.)
Indexed	9 months, 4 weeks ago (Oct. 22, 2024, 2:51 p.m.)

Funders 0

None

BibTeX

@inproceedings{Alien, series={IEDM-93}, title={Submicron Schottky-collector AlAs/GaAs resonant tunnel diodes}, url={http://dx.doi.org/10.1109/iedm.1993.347323}, DOI={10.1109/iedm.1993.347323}, booktitle={Proceedings of IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Alien, S.T. and Reddy, H. and Rodwell, M.J.W. and Smith, R.P. and Martin, S.C. and Lui, J. and Muller, R.E.}, pages={407–410}, collection={IEDM-93} }

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