DOI: 10.1109/iedm.1993.347320. Co-integrated resonant tunneling and heterojunction bipolar transistor full adder

Co-integrated resonant tunneling and heterojunction bipolar transistor full adder

10.1109/iedm.1993.347320

Crossref proceedings-article

IEEE

Proceedings of IEEE International Electron Devices Meeting (263)

Bibliography

Seabaugh, A. C., Taddiken, A. H., Beam, E. A., Randall, J. N., Kao, Y.-C., & Newell, B. (n.d.). Co-integrated resonant tunneling and heterojunction bipolar transistor full adder. Proceedings of IEEE International Electron Devices Meeting, 419â422.

Authors 6

A.C. Seabaugh (first)
A.H. Taddiken (additional)
E.A. Beam (additional)
J.N. Randall (additional)
Y.-C. Kao (additional)
B. Newell (additional)

References 8 Referenced 27

10.1109/55.244713
10.1109/16.168752
10.1109/55.244734
{'key': 'ref5', 'article-title': 'The use of organometallic group-V sources for the MOMBE of InGaP/GaAs and InGaAs/InP heterojunction bipolar device structures', 'author': 'beam', 'year': '1993', 'journal-title': 'J Cryst Growth'} / J Cryst Growth / The use of organometallic group-V sources for the MOMBE of InGaP/GaAs and InGaAs/InP heterojunction bipolar device structures by beam (1993)
10.1049/el:19931199
{'journal-title': 'BANDPROF heterojunction device simulator', 'year': '1993', 'key': 'ref7'} / BANDPROF heterojunction device simulator (1993)
10.1109/4.156447
{'key': 'ref1', 'first-page': '465', 'author': 'capasso', 'year': '1990', 'journal-title': 'High Speed Semiconductor Devices'} / High Speed Semiconductor Devices by capasso (1990)

Dates

Type	When
Created	22 years, 7 months ago (Dec. 30, 2002, 11:26 a.m.)
Deposited	8 years, 5 months ago (March 8, 2017, 6:54 p.m.)
Indexed	11 months, 2 weeks ago (Sept. 5, 2024, 6:16 a.m.)

Funders 0

None

BibTeX

@inproceedings{Seabaugh, series={IEDM-93}, title={Co-integrated resonant tunneling and heterojunction bipolar transistor full adder}, url={http://dx.doi.org/10.1109/iedm.1993.347320}, DOI={10.1109/iedm.1993.347320}, booktitle={Proceedings of IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Seabaugh, A.C. and Taddiken, A.H. and Beam, E.A. and Randall, J.N. and Kao, Y.-C. and Newell, B.}, pages={419–422}, collection={IEDM-93} }

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