Crossref proceedings-article
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Proceedings of IEEE International Electron Devices Meeting (263)
Bibliography

Ohguro, T., Yamada, K., Sugiyama, N., Usuda, K., Akasaka, Y., Yoshitomi, T., Fiegna, C., Ono, M., Saito, M., & Iwai, H. (n.d.). Tenth micron p-MOSFET’s with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD. Proceedings of IEEE International Electron Devices Meeting, 433–436.

Authors 10
  1. T. Ohguro (first)
  2. K. Yamada (additional)
  3. N. Sugiyama (additional)
  4. K. Usuda (additional)
  5. Y. Akasaka (additional)
  6. T. Yoshitomi (additional)
  7. C. Fiegna (additional)
  8. M. Ono (additional)
  9. M. Saito (additional)
  10. H. Iwai (additional)
References 5 Referenced 9
  1. {'key': 'ref4', 'first-page': '225', 'article-title': 'Si1-xGex epitaxial growth using UHV-CVD and its device applications', 'author': 'tatsumi', 'year': '1993', 'journal-title': 'Solid State Devices and Materials'} / Solid State Devices and Materials / Si1-xGex epitaxial growth using UHV-CVD and its device applications by tatsumi (1993)
  2. 10.1063/1.96673
  3. 10.1109/IEDM.1992.307501
  4. 10.1109/VLSIT.1993.760264
  5. 10.1109/VLSIT.1993.760231
Dates
Type When
Created 22 years, 7 months ago (Dec. 30, 2002, 4:26 p.m.)
Deposited 8 years, 5 months ago (March 8, 2017, 11:54 p.m.)
Indexed 11 months, 2 weeks ago (Sept. 4, 2024, 8:08 a.m.)
Funders 0

None

@inproceedings{Ohguro, series={IEDM-93}, title={Tenth micron p-MOSFET’s with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD}, url={http://dx.doi.org/10.1109/iedm.1993.347317}, DOI={10.1109/iedm.1993.347317}, booktitle={Proceedings of IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Ohguro, T. and Yamada, K. and Sugiyama, N. and Usuda, K. and Akasaka, Y. and Yoshitomi, T. and Fiegna, C. and Ono, M. and Saito, M. and Iwai, H.}, pages={433–436}, collection={IEDM-93} }