Bibliography
Ohguro, T., Yamada, K., Sugiyama, N., Usuda, K., Akasaka, Y., Yoshitomi, T., Fiegna, C., Ono, M., Saito, M., & Iwai, H. (n.d.). Tenth micron p-MOSFETâs with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD. Proceedings of IEEE International Electron Devices Meeting, 433â436.
References
5
Referenced
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{'key': 'ref4', 'first-page': '225', 'article-title': 'Si1-xGex epitaxial growth using UHV-CVD and its device applications', 'author': 'tatsumi', 'year': '1993', 'journal-title': 'Solid State Devices and Materials'}
/ Solid State Devices and Materials / Si1-xGex epitaxial growth using UHV-CVD and its device applications by tatsumi (1993)10.1063/1.96673
10.1109/IEDM.1992.307501
10.1109/VLSIT.1993.760264
10.1109/VLSIT.1993.760231
@inproceedings{Ohguro, series={IEDM-93}, title={Tenth micron p-MOSFET’s with ultra-thin epitaxial channel layer grown by ultra-high-vacuum CVD}, url={http://dx.doi.org/10.1109/iedm.1993.347317}, DOI={10.1109/iedm.1993.347317}, booktitle={Proceedings of IEEE International Electron Devices Meeting}, publisher={IEEE}, author={Ohguro, T. and Yamada, K. and Sugiyama, N. and Usuda, K. and Akasaka, Y. and Yoshitomi, T. and Fiegna, C. and Ono, M. and Saito, M. and Iwai, H.}, pages={433–436}, collection={IEDM-93} }