DOI: 10.1109/iedm.1992.307365. Damascene stud local interconnect in CMOS technology

Damascene stud local interconnect in CMOS technology

10.1109/iedm.1992.307365

Crossref proceedings-article

IEEE

International Technical Digest on Electron Devices Meeting (263)

Bibliography

White, Hill, Eslinger, Payne, Cote, Chen, & Johnson. (1992). Damascene stud local interconnect in CMOS technology. International Technical Digest on Electron Devices Meeting, 301â304.

Authors 7

White (first)
Hill (additional)
Eslinger (additional)
Payne (additional)
Cote (additional)
Chen (additional)
Johnson (additional)

References 8 Referenced 12

10.1149/1.2097203
{'key': 'ref3', 'first-page': '209', 'article-title': 'Submicron Wiring Technology with Tungsten and Planarization', 'author': 'kaanta', 'year': '1987', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest / Submicron Wiring Technology with Tungsten and Planarization by kaanta (1987)
10.1109/IEDM.1990.237011
10.1109/VMIC.1991.152961
{'key': 'ref8', 'first-page': '503', 'article-title': 'A Self Aligned Contact Process With Improved Surface Plananzation', 'volume': '4', 'author': 'kusters', 'year': '1988', 'journal-title': 'Journal de Physique Colloque'} / Journal de Physique Colloque / A Self Aligned Contact Process With Improved Surface Plananzation by kusters (1988)
{'key': 'ref7', 'first-page': '473', 'article-title': 'A 25?M<superscript>2</superscript> Bulk Full CMOS SRAM Cell Technology With Fully Overlapping Contacts', 'author': 'verhaar', 'year': '1990', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest / A 25?M<superscript>2</superscript> Bulk Full CMOS SRAM Cell Technology With Fully Overlapping Contacts by verhaar (1990)
{'key': 'ref2', 'first-page': '362', 'article-title': 'An 0.8?M CMOS Technology For High Performance Logic Applications', 'author': 'chapman', 'year': '1987', 'journal-title': 'IEDM Tech Digest'} / IEDM Tech Digest / An 0.8?M CMOS Technology For High Performance Logic Applications by chapman (1987)
10.1109/IEDM.1987.191430 / 1987 International Electron Devices Meeting / self-aligned contact schemes for source-drains in submicron devices by lynch (1987)

Dates

Type	When
Created	22 years, 7 months ago (Jan. 2, 2003, 7:46 a.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 9:12 a.m.)
Indexed	3 months, 3 weeks ago (April 29, 2025, 12:58 p.m.)
Issued	33 years, 7 months ago (Jan. 1, 1992)
Published	33 years, 7 months ago (Jan. 1, 1992)
Published Print	33 years, 7 months ago (Jan. 1, 1992)

Funders 0

None

BibTeX

@inproceedings{White_1992, title={Damascene stud local interconnect in CMOS technology}, url={http://dx.doi.org/10.1109/iedm.1992.307365}, DOI={10.1109/iedm.1992.307365}, booktitle={International Technical Digest on Electron Devices Meeting}, publisher={IEEE}, author={White and Hill and Eslinger and Payne and Cote and Chen and Johnson}, year={1992}, pages={301–304} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        29
      ]
    ],
    "date-time": "2025-04-29T16:58:53Z",
    "timestamp": 1745945933457,
    "version": "3.28.0"
  },
  "reference-count": 8,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1992
      ]
    ]
  },
  "DOI": "10.1109/iedm.1992.307365",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2003,
        1,
        2
      ]
    ],
    "date-time": "2003-01-02T12:46:43Z",
    "timestamp": 1041511603000
  },
  "page": "301-304",
  "source": "Crossref",
  "is-referenced-by-count": 12,
  "title": "Damascene stud local interconnect in CMOS technology",
  "prefix": "10.1109",
  "author": [
    {
      "family": "White",
      "sequence": "first",
      "affiliation": []
    },
    {
      "family": "Hill",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Eslinger",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Payne",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Cote",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Chen",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Johnson",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "doi-asserted-by": "publisher",
      "DOI": "10.1149/1.2097203"
    },
    {
      "key": "ref3",
      "first-page": "209",
      "article-title": "Submicron Wiring Technology with Tungsten and Planarization",
      "author": "kaanta",
      "year": "1987",
      "journal-title": "IEDM Tech Digest"
    },
    {
      "key": "ref6",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/IEDM.1990.237011"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/VMIC.1991.152961"
    },
    {
      "key": "ref8",
      "first-page": "503",
      "article-title": "A Self Aligned Contact Process With Improved Surface Plananzation",
      "volume": "4",
      "author": "kusters",
      "year": "1988",
      "journal-title": "Journal de Physique Colloque"
    },
    {
      "key": "ref7",
      "first-page": "473",
      "article-title": "A 25?M<superscript>2</superscript> Bulk Full CMOS SRAM Cell Technology With Fully Overlapping Contacts",
      "author": "verhaar",
      "year": "1990",
      "journal-title": "IEDM Tech Digest"
    },
    {
      "key": "ref2",
      "first-page": "362",
      "article-title": "An 0.8?M CMOS Technology For High Performance Logic Applications",
      "author": "chapman",
      "year": "1987",
      "journal-title": "IEDM Tech Digest"
    },
    {
      "key": "ref1",
      "doi-asserted-by": "crossref",
      "first-page": "354",
      "DOI": "10.1109/IEDM.1987.191430",
      "article-title": "self-aligned contact schemes for source-drains in submicron devices",
      "author": "lynch",
      "year": "1987",
      "journal-title": "1987 International Electron Devices Meeting"
    }
  ],
  "event": "Proceedings of IEEE International Electron Devices Meeting",
  "container-title": "International Technical Digest on Electron Devices Meeting",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx2/1032/7499/00307365.pdf?arnumber=307365",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        6,
        15
      ]
    ],
    "date-time": "2017-06-15T13:12:33Z",
    "timestamp": 1497532353000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/307365/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1992
      ]
    ]
  },
  "references-count": 8,
  "URL": "http://dx.doi.org/10.1109/IEDM.1992.307365",
  "relation": {},
  "subject": [],
  "published": {
    "date-parts": [
      [
        1992
      ]
    ]
  }
}