DOI: 10.1109/iedm.1988.32840. On the universality of inversion-layer mobility in n- and p-channel MOSFETs

On the universality of inversion-layer mobility in n- and p-channel MOSFETs

10.1109/iedm.1988.32840

Crossref proceedings-article

IEEE

Technical Digest., International Electron Devices Meeting (263)

Bibliography

Takagi, S., Iwase, M., & Toriumi, A. (n.d.). On the universality of inversion-layer mobility in n- and p-channel MOSFETs. Technical Digest., International Electron Devices Meeting, 398â401.

Authors 3

S. Takagi (first)
M. Iwase (additional)
A. Toriumi (additional)

References 9 Referenced 79

10.1016/0038-1101(82)90170-8
{'key': 'ref3', 'first-page': '81', 'article-title': 'universal mobility-field curves for electrons and holes in mos inversion layers', 'author': 'watt', 'year': '1987', 'journal-title': '1987 Symposium on VLSI Technology Digest of Technical Papers VLSIT'} / 1987 Symposium on VLSI Technology Digest of Technical Papers VLSIT / universal mobility-field curves for electrons and holes in mos inversion layers by watt (1987)
10.1143/JPSJ.27.906
10.1109/T-ED.1986.22662
10.7567/JJAPS.2S2.367
10.1016/0039-6028(73)90038-1
10.1109/T-ED.1987.22889
{'key': 'ref9', 'first-page': '161', 'article-title': 'Experimental evidence for hole-induced interface state generation under high field tunneling current stressing', 'author': 'ozawa', 'year': '1988', 'journal-title': '10th Conf Solid State Devices'} / 10th Conf Solid State Devices / Experimental evidence for hole-induced interface state generation under high field tunneling current stressing by ozawa (1988)
{'key': 'ref1', 'first-page': '18', 'article-title': 'Characterization of the electron mobility in the weakly inverted <100>si1icon surface', 'author': 'sabnis', 'year': '1979', 'journal-title': 'IEDM Technical Digest'} / IEDM Technical Digest / Characterization of the electron mobility in the weakly inverted <100>si1icon surface by sabnis (1979)

Dates

Type	When
Created	22 years, 7 months ago (Jan. 6, 2003, 9:05 a.m.)
Deposited	8 years, 5 months ago (March 8, 2017, 12:42 p.m.)
Indexed	3 months, 4 weeks ago (April 23, 2025, 10:45 p.m.)

Funders 0

None

BibTeX

@inproceedings{Takagi, title={On the universality of inversion-layer mobility in n- and p-channel MOSFETs}, url={http://dx.doi.org/10.1109/iedm.1988.32840}, DOI={10.1109/iedm.1988.32840}, booktitle={Technical Digest., International Electron Devices Meeting}, publisher={IEEE}, author={Takagi, S. and Iwase, M. and Toriumi, A.}, pages={398–401} }

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