DOI: 10.1109/iedm.1988.32759. A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS

10.1109/iedm.1988.32759

Crossref proceedings-article

IEEE

Technical Digest., International Electron Devices Meeting (263)

Bibliography

Davari, B., Koburger, C., Furukawa, T., Taur, Y., Noble, W., Megdanis, A., Warnock, J., & Mauer, J. (n.d.). A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS. Technical Digest., International Electron Devices Meeting, 92â95.

Authors 8

B. Davari (first)
C. Koburger (additional)
T. Furukawa (additional)
Y. Taur (additional)
W. Noble (additional)
A. Megdanis (additional)
J. Warnock (additional)
J. Mauer (additional)

References 5 Referenced 33

10.1109/IEDM.1983.190432 / 1983 International Electron Devices Meeting / a simplified box (buried-oxide) isolation technology for megabit dynamic memories by shibata (1983)
10.1109/IEDM.1982.190261 / 1982 International Electron Devices Meeting / deep trench isolated cmos devices by rung (1982)
10.1109/IEDM.1987.191535 / 1987 International Electron Devices Meeting / a practical trench isolation technology with a novel planarization process by fuse (1987)
10.1109/IEDM.1985.190983 / 1985 International Electron Devices Meeting / scaling limitations of submicron local oxidation technology by hui (1985)
{'key': 'ref1', 'first-page': '25', 'article-title': '16 Mb Merged Isolation and Node Trench SPT Cell (MINT)', 'author': 'kenney', 'year': '0', 'journal-title': '1988 Symp VLSI Technology'} / 1988 Symp VLSI Technology / 16 Mb Merged Isolation and Node Trench SPT Cell (MINT) by kenney (0)

Dates

Type	When
Created	22 years, 7 months ago (Jan. 6, 2003, 9:05 a.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 9:14 a.m.)
Indexed	1 month, 2 weeks ago (July 6, 2025, 1:42 a.m.)

Funders 0

None

BibTeX

@inproceedings{Davari, title={A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS}, url={http://dx.doi.org/10.1109/iedm.1988.32759}, DOI={10.1109/iedm.1988.32759}, booktitle={Technical Digest., International Electron Devices Meeting}, publisher={IEEE}, author={Davari, B. and Koburger, C. and Furukawa, T. and Taur, Y. and Noble, W. and Megdanis, A. and Warnock, J. and Mauer, J.}, pages={92–95} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        6
      ]
    ],
    "date-time": "2025-07-06T05:42:22Z",
    "timestamp": 1751780542905
  },
  "reference-count": 5,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1109/iedm.1988.32759",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2003,
        1,
        6
      ]
    ],
    "date-time": "2003-01-06T14:05:09Z",
    "timestamp": 1041861909000
  },
  "page": "92-95",
  "source": "Crossref",
  "is-referenced-by-count": 33,
  "title": "A variable-stress shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS",
  "prefix": "10.1109",
  "author": [
    {
      "given": "B.",
      "family": "Davari",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "C.",
      "family": "Koburger",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "T.",
      "family": "Furukawa",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Y.",
      "family": "Taur",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "W.",
      "family": "Noble",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "A.",
      "family": "Megdanis",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Warnock",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.",
      "family": "Mauer",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "doi-asserted-by": "crossref",
      "first-page": "27",
      "DOI": "10.1109/IEDM.1983.190432",
      "article-title": "a simplified box (buried-oxide) isolation technology for megabit dynamic memories",
      "author": "shibata",
      "year": "1983",
      "journal-title": "1983 International Electron Devices Meeting"
    },
    {
      "key": "ref3",
      "doi-asserted-by": "crossref",
      "first-page": "237",
      "DOI": "10.1109/IEDM.1982.190261",
      "article-title": "deep trench isolated cmos devices",
      "author": "rung",
      "year": "1982",
      "journal-title": "1982 International Electron Devices Meeting"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "crossref",
      "first-page": "732",
      "DOI": "10.1109/IEDM.1987.191535",
      "article-title": "a practical trench isolation technology with a novel planarization process",
      "author": "fuse",
      "year": "1987",
      "journal-title": "1987 International Electron Devices Meeting"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "crossref",
      "first-page": "392",
      "DOI": "10.1109/IEDM.1985.190983",
      "article-title": "scaling limitations of submicron local oxidation technology",
      "author": "hui",
      "year": "1985",
      "journal-title": "1985 International Electron Devices Meeting"
    },
    {
      "key": "ref1",
      "first-page": "25",
      "article-title": "16 Mb Merged Isolation and Node Trench SPT Cell (MINT)",
      "author": "kenney",
      "year": "0",
      "journal-title": "1988 Symp VLSI Technology"
    }
  ],
  "event": "Technical Digest., International Electron Devices Meeting",
  "container-title": "Technical Digest., International Electron Devices Meeting",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx2/713/1415/00032759.pdf?arnumber=32759",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        6,
        15
      ]
    ],
    "date-time": "2017-06-15T13:14:29Z",
    "timestamp": 1497532469000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/32759/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        null
      ]
    ]
  },
  "references-count": 5,
  "URL": "http://dx.doi.org/10.1109/IEDM.1988.32759",
  "relation": {},
  "subject": []
}