DOI: 10.1109/gaas.1989.69308. A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs

A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs

10.1109/gaas.1989.69308

Crossref proceedings-article

IEEE

11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium (263)

Bibliography

Yamauchi, Y., Nakajima, O., Nagata, K., Ito, H., & Ishibashi, T. (n.d.). A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs. 11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 121â124.

Authors 5

Y. Yamauchi (first)
O. Nakajima (additional)
K. Nagata (additional)
H. Ito (additional)
T. Ishibashi (additional)

References 6 Referenced 16

10.1049/el:19870623
10.1109/55.9279
{'key': 'ref6', 'first-page': '286', 'article-title': 'Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates', 'volume': 'e69', 'author': 'yamauchi', 'year': '1986', 'journal-title': 'Transactions of the IECE of Japan'} / Transactions of the IECE of Japan / Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates by yamauchi (1986)
10.1109/EDL.1987.26668 / IEEE Electron Device Letters / a 20-ghz frequency divider implemented with heterojunction bipolar transistors by wang (1987)
10.1109/16.2471
10.1109/EDL.1987.26639 / IEEE Electron Device Letters / algaas/gaas heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process by chang (1987)

Dates

Type	When
Created	22 years, 7 months ago (Jan. 13, 2003, 8:46 a.m.)
Deposited	8 years, 2 months ago (June 15, 2017, 9:19 a.m.)
Indexed	4 months, 3 weeks ago (March 30, 2025, 12:45 p.m.)

Funders 0

None

BibTeX

@inproceedings{Yamauchi, title={A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs}, url={http://dx.doi.org/10.1109/gaas.1989.69308}, DOI={10.1109/gaas.1989.69308}, booktitle={11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium}, publisher={IEEE}, author={Yamauchi, Y. and Nakajima, O. and Nagata, K. and Ito, H. and Ishibashi, T.}, pages={121–124} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        3,
        30
      ]
    ],
    "date-time": "2025-03-30T16:45:02Z",
    "timestamp": 1743353102610,
    "version": "3.28.0"
  },
  "reference-count": 6,
  "publisher": "IEEE",
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "DOI": "10.1109/gaas.1989.69308",
  "type": "proceedings-article",
  "created": {
    "date-parts": [
      [
        2003,
        1,
        13
      ]
    ],
    "date-time": "2003-01-13T13:46:33Z",
    "timestamp": 1042465593000
  },
  "page": "121-124",
  "source": "Crossref",
  "is-referenced-by-count": 16,
  "title": "A 34.8 GHz 1/4 static frequency divider using AlGaAs/GaAs HBTs",
  "prefix": "10.1109",
  "author": [
    {
      "given": "Y.",
      "family": "Yamauchi",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "O.",
      "family": "Nakajima",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "K.",
      "family": "Nagata",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H.",
      "family": "Ito",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "T.",
      "family": "Ishibashi",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "doi-asserted-by": "publisher",
      "DOI": "10.1049/el:19870623"
    },
    {
      "key": "ref3",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.9279"
    },
    {
      "key": "ref6",
      "first-page": "286",
      "article-title": "Dependence of Switching Performance on Emitter Resistance and Current Gain in GaAs/AlGaAs HBT ECL Gates",
      "volume": "e69",
      "author": "yamauchi",
      "year": "1986",
      "journal-title": "Transactions of the IECE of Japan"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "crossref",
      "first-page": "383",
      "DOI": "10.1109/EDL.1987.26668",
      "article-title": "a 20-ghz frequency divider implemented with heterojunction bipolar transistors",
      "volume": "8",
      "author": "wang",
      "year": "1987",
      "journal-title": "IEEE Electron Device Letters"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.2471"
    },
    {
      "key": "ref1",
      "doi-asserted-by": "crossref",
      "first-page": "303",
      "DOI": "10.1109/EDL.1987.26639",
      "article-title": "algaas/gaas heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process",
      "volume": "8",
      "author": "chang",
      "year": "1987",
      "journal-title": "IEEE Electron Device Letters"
    }
  ],
  "event": "11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium",
  "container-title": "11th Annual Gallium Arsenide Integrated Circuit (GaAs IC) Symposium",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx2/827/2443/00069308.pdf?arnumber=69308",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2017,
        6,
        15
      ]
    ],
    "date-time": "2017-06-15T13:19:07Z",
    "timestamp": 1497532747000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/69308/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        null
      ]
    ]
  },
  "references-count": 6,
  "URL": "http://dx.doi.org/10.1109/GAAS.1989.69308",
  "relation": {},
  "subject": []
}