DOI: 10.1109/edl.1985.26190. Noise behavior of 1-µm gate-length modulation-doped FET's from 10<sup>-2</sup>to 10<sup>8</sup>Hz

Noise behavior of 1-µm gate-length modulation-doped FET's from 10-2to 108Hz

10.1109/edl.1985.26190

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Liu, S. M., Das, M. B., Kopp, W., & Morkoc, H. (1985). Noise behavior of 1-Âµm gate-length modulation-doped FETâs from 10-2to 108Hz. IEEE Electron Device Letters, 6(9), 453â455.

Authors 4

S.M. Liu (first)
M.B. Das (additional)
W. Kopp (additional)
H. Morkoc (additional)

References 0 Referenced 25

None

Dates

Type	When
Created	17 years, 7 months ago (Jan. 11, 2008, 7:52 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:19 p.m.)
Indexed	1 year, 6 months ago (Feb. 4, 2024, 2:59 a.m.)
Issued	39 years, 11 months ago (Sept. 1, 1985)
Published	39 years, 11 months ago (Sept. 1, 1985)
Published Print	39 years, 11 months ago (Sept. 1, 1985)

Funders 0

None

BibTeX

@article{Liu_1985, title={Noise behavior of 1-µm gate-length modulation-doped FET’s from 10-2to 108Hz}, volume={6}, ISSN={0741-3106}, url={http://dx.doi.org/10.1109/edl.1985.26190}, DOI={10.1109/edl.1985.26190}, number={9}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Liu, S.M. and Das, M.B. and Kopp, W. and Morkoc, H.}, year={1985}, month=sep, pages={453–455} }

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