DOI: 10.1109/drc.1998.731100. Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs

Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs

10.1109/drc.1998.731100

Crossref proceedings-article

IEEE

56th Annual Device Research Conference Digest (Cat. No.98TH8373) (263)

Bibliography

Tiwari, S., Welser, J. J., DiMaria, D. J., & Rana, F. (n.d.). Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs. 56th Annual Device Research Conference Digest (Cat. No.98TH8373), 12â13.

Authors 4

S. Tiwari (first)
J.J. Welser (additional)
D.J. DiMaria (additional)
F. Rana (additional)

References 3 Referenced 6

Dates

Type	When
Created	22 years, 8 months ago (Nov. 27, 2002, 12:08 p.m.)
Deposited	8 years, 5 months ago (March 9, 2017, 10:30 a.m.)
Indexed	4 months, 1 week ago (April 14, 2025, 12:26 a.m.)

Funders 0

None

BibTeX

@inproceedings{Tiwari, series={DRC-98}, title={Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs}, url={http://dx.doi.org/10.1109/drc.1998.731100}, DOI={10.1109/drc.1998.731100}, booktitle={56th Annual Device Research Conference Digest (Cat. No.98TH8373)}, publisher={IEEE}, author={Tiwari, S. and Welser, J.J. and DiMaria, D.J. and Rana, F.}, pages={12–13}, collection={DRC-98} }

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