DOI: 10.1109/55.6946. High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

10.1109/55.6946

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Sai-Halasz, G. A., Wordeman, M. R., Kern, D. P., Rishton, S., & Ganin, E. (1988). High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level. IEEE Electron Device Letters, 9(9), 464â466.

Authors 5

G.A. Sai-Halasz (first)
M.R. Wordeman (additional)
D.P. Kern (additional)
S. Rishton (additional)
E. Ganin (additional)

References 15 Referenced 136

10.1109/IEDM.1981.190149 / 1981 International Electron Devices Meeting / use of process and 2-d mos simulation in the study of doping profile influence on s/d resistance in short channel mosfet's by antognetti (1981)
10.1109/T-ED.1986.22707
10.1016/0038-1101(88)90091-3
10.1109/EDL.1981.25387 / IEEE Electron Device Letters / measurement of the high-field drift velocity of electrons in inversion layers on silicon by cooper (1981)
10.1063/1.1659111
10.1109/55.6947
10.1109/EDL.1985.26267 / IEEE Electron Device Letters / observation of electron velocity overshoot in sub-100-nm-channel mosfet's in silicon by chou (1985)
10.1063/1.323496
10.1109/EDL.1987.26695
10.1109/55.2051
10.1116/1.584032
10.1109/IEDM.1987.191441 / 1987 International Electron Devices Meeting / experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation nmos devices by sai-halasz (1987)
10.1109/T-ED.1972.17468
10.1109/IEDM.1972.249198 / 1972 International Electron Devices Meeting / design of micron mos switching devices by dennard (1972)
10.1109/EDL.1986.26463 / IEEE Electron Device Letters / device-grade ultra-shallow junctions fabricated with antimony by sai-halasz (1986)

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 2:46 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:09 p.m.)
Indexed	4 months ago (April 17, 2025, 2:29 a.m.)
Issued	36 years, 11 months ago (Sept. 1, 1988)
Published	36 years, 11 months ago (Sept. 1, 1988)
Published Print	36 years, 11 months ago (Sept. 1, 1988)

Funders 0

None

BibTeX

@article{Sai_Halasz_1988, title={High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level}, volume={9}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/55.6946}, DOI={10.1109/55.6946}, number={9}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sai-Halasz, G.A. and Wordeman, M.R. and Kern, D.P. and Rishton, S. and Ganin, E.}, year={1988}, month=sep, pages={464–466} }

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