DOI: 10.1109/55.689. A multiple-state memory cell based on the resonant tunneling diode

A multiple-state memory cell based on the resonant tunneling diode

10.1109/55.689

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Soderstrom, J., & Andersson, T. G. (1988). A multiple-state memory cell based on the resonant tunneling diode. IEEE Electron Device Letters, 9(5), 200â202.

Authors 2

J. Soderstrom (first)
T.G. Andersson (additional)

References 12 Referenced 48

10.1016/0749-6036(87)90073-5
10.1143/JJAP.26.L1332
10.1109/T-ED.1987.23215 / IEEE Transactions on Electron Devices / resonant tunneling device with multiple negative differential resistance: digital and signal processing applications with reduced circuit complexity by sen (1987)
10.1109/JQE.1986.1073171
10.1063/1.97360
10.1063/1.97923
10.1063/1.95574
10.1016/0749-6036(86)90155-2
10.1103/PhysRevB.33.7368
10.1063/1.98588
10.1109/EDL.1987.26637 / IEEE Electron Device Letters / resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications by capasso (1987)
10.1063/1.1655067

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 2:46 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:09 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 5:15 a.m.)
Issued	37 years, 3 months ago (May 1, 1988)
Published	37 years, 3 months ago (May 1, 1988)
Published Print	37 years, 3 months ago (May 1, 1988)

Funders 0

None

BibTeX

@article{Soderstrom_1988, title={A multiple-state memory cell based on the resonant tunneling diode}, volume={9}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/55.689}, DOI={10.1109/55.689}, number={5}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Soderstrom, J. and Andersson, T.G.}, year={1988}, month=may, pages={200–202} }

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