Crossref journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Electron Device Letters (263)
Authors 7
  1. J.B. McKeon (first)
  2. G. Chindalore (additional)
  3. S.A. Hareland (additional)
  4. W.-K. Shih (additional)
  5. C. Wang (additional)
  6. A.F. Tasch (additional)
  7. C.M. Maziar (additional)
References 12 Referenced 16
  1. 10.1109/IEDM.1993.347317
  2. 10.1109/VLSIT.1993.760264
  3. 10.1109/IEDM.1988.32840
  4. {'key': 'ref6', 'first-page': '18', 'article-title': 'characterization of the electron mobility in the inverted <formula><tex>$\\langle$</tex></formula>100<formula><tex>$\\rangle$</tex></formula> silicon surface', 'author': 'sabnis', 'year': '1979', 'journal-title': 'IEEE IEDM Tech Dig'} / IEEE IEDM Tech Dig / characterization of the electron mobility in the inverted <formula><tex>$\langle$</tex></formula>100<formula><tex>$\rangle$</tex></formula> silicon surface by sabnis (1979)
  5. 10.1149/1.2404044
  6. 10.1109/16.372076
  7. 10.1109/T-ED.1983.21207
  8. {'key': 'ref8', 'author': 'ho', 'year': '1984', 'journal-title': 'SUPREM III&#x2014 A program for integrated circuit process modeling and simulation'} / SUPREM III&#x2014 A program for integrated circuit process modeling and simulation by ho (1984)
  9. {'key': 'ref7', 'author': 'pinto', 'year': '1986', 'journal-title': 'PISCES-IIB&#x2014 poisson and continuity equation solver'} / PISCES-IIB&#x2014 poisson and continuity equation solver by pinto (1986)
  10. 10.1063/1.342800
  11. 10.1109/T-ED.1980.20063
  12. {'key': 'ref9', 'first-page': '323', 'author': 'ashcroft', 'year': '1976', 'journal-title': 'Solid State Physics'} / Solid State Physics by ashcroft (1976)
Dates
Type When
Created 22 years, 11 months ago (Aug. 24, 2002, 2:46 p.m.)
Deposited 3 years, 8 months ago (Nov. 29, 2021, 3:09 p.m.)
Indexed 5 months ago (March 19, 2025, 7:58 a.m.)
Issued 28 years, 3 months ago (May 1, 1997)
Published 28 years, 3 months ago (May 1, 1997)
Published Print 28 years, 3 months ago (May 1, 1997)
Funders 0

None

@article{McKeon_1997, title={Experimental determination of electron and hole mobilities in MOS accumulation layers}, volume={18}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/55.568762}, DOI={10.1109/55.568762}, number={5}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={McKeon, J.B. and Chindalore, G. and Hareland, S.A. and Shih, W.-K. and Wang, C. and Tasch, A.F. and Maziar, C.M.}, year={1997}, month=may, pages={200–202} }