DOI: 10.1109/55.468289. Electron mobility behavior in extremely thin SOI MOSFET's

Electron mobility behavior in extremely thin SOI MOSFET's

10.1109/55.468289

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Jin-Hyeok Choi, Young-June Park, & Hong-Shick Min. (1995). Electron mobility behavior in extremely thin SOI MOSFETâs. IEEE Electron Device Letters, 16(11), 527â529.

Authors 3

Jin-Hyeok Choi (first)
Young-June Park (additional)
Hong-Shick Min (additional)

References 12 Referenced 80

{'key': 'ref4', 'first-page': '645', 'article-title': 'Extremely thin film (10nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling', 'author': 'choi', 'year': '1994', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Extremely thin film (10nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling by choi (1994)
{'key': 'ref3', 'first-page': '120', 'article-title': "Inversion electron effective mobility in SOI MOSFET's", 'author': 'sherony', 'year': '1993', 'journal-title': 'IEEE SOI Conf Proc'} / IEEE SOI Conf Proc / Inversion electron effective mobility in SOI MOSFET's by sherony (1993)
10.1109/55.192844
10.1109/16.158807
10.1109/16.293310
{'key': 'ref5', 'first-page': '135', 'article-title': 'Gate recessed (GR) MOSFET with selectively halo-doped channel and deep grades source/drain for deep submicron CMOS', 'author': 'lee', 'year': '1993', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Gate recessed (GR) MOSFET with selectively halo-doped channel and deep grades source/drain for deep submicron CMOS by lee (1993)
10.1109/16.129103
10.1109/16.214739
10.1109/16.214740
10.1109/55.285411
10.1109/IEDM.1988.32840
10.1007/978-1-4757-2121-8

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 2:32 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:09 p.m.)
Indexed	4 months ago (April 15, 2025, 2:11 a.m.)
Issued	29 years, 9 months ago (Nov. 1, 1995)
Published	29 years, 9 months ago (Nov. 1, 1995)
Published Print	29 years, 9 months ago (Nov. 1, 1995)

Funders 0

None

BibTeX

@article{Jin_Hyeok_Choi_1995, title={Electron mobility behavior in extremely thin SOI MOSFET’s}, volume={16}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/55.468289}, DOI={10.1109/55.468289}, number={11}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Jin-Hyeok Choi and Young-June Park and Hong-Shick Min}, year={1995}, month=nov, pages={527–529} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        15
      ]
    ],
    "date-time": "2025-04-15T06:11:03Z",
    "timestamp": 1744697463746
  },
  "reference-count": 12,
  "publisher": "Institute of Electrical and Electronics Engineers (IEEE)",
  "issue": "11",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1995,
            11,
            1
          ]
        ],
        "date-time": "1995-11-01T00:00:00Z",
        "timestamp": 815184000000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1995,
        11
      ]
    ]
  },
  "DOI": "10.1109/55.468289",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        8,
        24
      ]
    ],
    "date-time": "2002-08-24T18:32:16Z",
    "timestamp": 1030213936000
  },
  "page": "527-529",
  "source": "Crossref",
  "is-referenced-by-count": 80,
  "title": "Electron mobility behavior in extremely thin SOI MOSFET's",
  "prefix": "10.1109",
  "volume": "16",
  "author": [
    {
      "family": "Jin-Hyeok Choi",
      "sequence": "first",
      "affiliation": []
    },
    {
      "family": "Young-June Park",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "family": "Hong-Shick Min",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref4",
      "first-page": "645",
      "article-title": "Extremely thin film (10nm) SOI MOSFET characteristics including inversion layer to accumulation layer tunneling",
      "author": "choi",
      "year": "1994",
      "journal-title": "IEDM Tech Dig"
    },
    {
      "key": "ref3",
      "first-page": "120",
      "article-title": "Inversion electron effective mobility in SOI MOSFET's",
      "author": "sherony",
      "year": "1993",
      "journal-title": "IEEE SOI Conf Proc"
    },
    {
      "key": "ref10",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.192844"
    },
    {
      "key": "ref6",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.158807"
    },
    {
      "key": "ref11",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.293310"
    },
    {
      "key": "ref5",
      "first-page": "135",
      "article-title": "Gate recessed (GR) MOSFET with selectively halo-doped channel and deep grades source/drain for deep submicron CMOS",
      "author": "lee",
      "year": "1993",
      "journal-title": "IEDM Tech Dig"
    },
    {
      "key": "ref12",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.129103"
    },
    {
      "key": "ref8",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.214739"
    },
    {
      "key": "ref7",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.214740"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.285411"
    },
    {
      "key": "ref9",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/IEDM.1988.32840"
    },
    {
      "key": "ref1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/978-1-4757-2121-8"
    }
  ],
  "container-title": "IEEE Electron Device Letters",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx1/55/9854/00468289.pdf?arnumber=468289",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        11,
        29
      ]
    ],
    "date-time": "2021-11-29T20:09:37Z",
    "timestamp": 1638216577000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/468289/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995,
        11
      ]
    ]
  },
  "references-count": 12,
  "journal-issue": {
    "issue": "11"
  },
  "URL": "http://dx.doi.org/10.1109/55.468289",
  "relation": {},
  "ISSN": [
    "0741-3106",
    "1558-0563"
  ],
  "subject": [],
  "container-title-short": "IEEE Electron Device Lett.",
  "published": {
    "date-parts": [
      [
        1995,
        11
      ]
    ]
  }
}