DOI: 10.1109/55.260792. Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs

10.1109/55.260792

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Electron Device Letters (263)

Bibliography

Omura, Y., Horiguchi, S., Tabe, M., & Kishi, K. (1993). Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs. IEEE Electron Device Letters, 14(12), 569â571.

Authors 4

Y. Omura (first)
S. Horiguchi (additional)
M. Tabe (additional)
K. Kishi (additional)

References 6 Referenced 231

10.1016/0038-1101(80)90020-9
10.1109/16.210214
{'key': 'ref6', 'first-page': '367', 'author': 'sze', 'year': '1981', 'journal-title': 'Physics of Semiconductor Devices'} / Physics of Semiconductor Devices by sze (1981)
10.1109/IEDM.1992.307422
10.1109/IEDM.1987.191509 / 1987 International Electron Devices Meeting / high performance soimosfet using ultra-thin soi film by yoshimi (1987)
10.1109/EDL.1987.26677

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 2:46 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:09 p.m.)
Indexed	2 months, 1 week ago (June 14, 2025, 11:28 a.m.)
Issued	31 years, 8 months ago (Dec. 1, 1993)
Published	31 years, 8 months ago (Dec. 1, 1993)
Published Print	31 years, 8 months ago (Dec. 1, 1993)

Funders 0

None

BibTeX

@article{Omura_1993, title={Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs}, volume={14}, ISSN={1558-0563}, url={http://dx.doi.org/10.1109/55.260792}, DOI={10.1109/55.260792}, number={12}, journal={IEEE Electron Device Letters}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Omura, Y. and Horiguchi, S. and Tabe, M. and Kishi, K.}, year={1993}, month=dec, pages={569–571} }

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