Crossref
journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Journal of Solid-State Circuits (263)
References
13
Referenced
48
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/ IEEE Electron Device Letters / resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications by capasso (1987)10.1109/ISMVL.1988.5170
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{'key': 'ref8', 'author': 'rine', 'year': '1984', 'journal-title': 'Computer Science and Multiple-Valued Logic Theory and Applications'}
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10.1063/1.1655067
10.1109/16.40888
{'key': 'ref9', 'article-title': 'dc and transient simulation of resonant tunneling devices in ndr-spice', 'author': 'mazumder', 'year': '1994', 'journal-title': '21st Int Symp Compound Semiconductors'}
/ 21st Int Symp Compound Semiconductors / dc and transient simulation of resonant tunneling devices in ndr-spice by mazumder (1994)
Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Aug. 24, 2002, 4 p.m.) |
Deposited | 3 years, 8 months ago (Nov. 29, 2021, 3:06 p.m.) |
Indexed | 1 year ago (Aug. 20, 2024, 6:29 a.m.) |
Issued | 29 years, 7 months ago (Jan. 1, 1996) |
Published | 29 years, 7 months ago (Jan. 1, 1996) |
Published Print | 29 years, 7 months ago (Jan. 1, 1996) |
@article{Chan_1996, title={Compact multiple-valued multiplexers using negative differential resistance devices}, volume={31}, ISSN={0018-9200}, url={http://dx.doi.org/10.1109/4.508262}, DOI={10.1109/4.508262}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Chan, H.L. and Mohan, S. and Mazumder, P. and Haddad, G.I.}, year={1996}, pages={1151–1156} }