DOI: 10.1109/4.400439. Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation

Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation

10.1109/4.400439

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Journal of Solid-State Circuits (263)

Bibliography

Shih-Wei Sun, & Tsui, P. G. Y. (1995). Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation. IEEE Journal of Solid-State Circuits, 30(8), 947â949.

Authors 2

Shih-Wei Sun (first)
P.G.Y. Tsui (additional)

References 7 Referenced 64

10.1109/4.52187
10.1109/VLSIC.1992.229241
10.1109/16.57142 / IEEE Trans Electron Devices / Power-supply voltage impact on circuit performance for half and lower submicrometer CMOS LSI by kakumu (1990)
{'key': 'ref5', 'first-page': '137', 'author': 'weste', 'year': '1985', 'journal-title': 'Principles of CMOS VLSI Design A Systems Perspective'} / Principles of CMOS VLSI Design A Systems Perspective by weste (1985)
10.1109/16.168754
10.1109/4.179198
10.1109/ISSCC.1993.280012

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:06 p.m.)
Indexed	1 month ago (July 20, 2025, 12:24 a.m.)
Issued	30 years, 7 months ago (Jan. 1, 1995)
Published	30 years, 7 months ago (Jan. 1, 1995)
Published Print	30 years, 7 months ago (Jan. 1, 1995)

Funders 0

None

BibTeX

@article{Shih_Wei_Sun_1995, title={Limitation of CMOS supply-voltage scaling by MOSFET threshold-voltage variation}, volume={30}, ISSN={0018-9200}, url={http://dx.doi.org/10.1109/4.400439}, DOI={10.1109/4.400439}, number={8}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Shih-Wei Sun and Tsui, P.G.Y.}, year={1995}, pages={947–949} }

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