Crossref
journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Journal of Solid-State Circuits (263)
References
12
Referenced
17
10.1063/1.97923
10.1109/55.758
10.1109/4.127345
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10.1109/16.8887
10.1109/2.48
10.1109/IEDM.1989.74346
10.1109/EDL.1987.26637
/ IEEE Electron Device Letters / resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications by capasso (1987)10.1109/T-ED.1987.23215
/ IEEE Transactions on Electron Devices / resonant tunneling device with multiple negative differential resistance: digital and signal processing applications with reduced circuit complexity by sen (1987)10.1109/TC.1986.1676727
10.1109/55.689
10.1109/VLSIT.1990.110987
Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Aug. 24, 2002, 4 p.m.) |
Deposited | 3 years, 8 months ago (Nov. 29, 2021, 3:06 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 4:23 p.m.) |
Issued | 31 years, 3 months ago (May 1, 1994) |
Published | 31 years, 3 months ago (May 1, 1994) |
Published Print | 31 years, 3 months ago (May 1, 1994) |
@article{Ming_Huei_Shieh_1994, title={A multiple-dimensional multiple-state SRAM cell using resonant tunneling diodes}, volume={29}, ISSN={0018-9200}, url={http://dx.doi.org/10.1109/4.284716}, DOI={10.1109/4.284716}, number={5}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Ming-Huei Shieh and Hung Chang Lin}, year={1994}, month=may, pages={623–630} }