Crossref journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Journal of Solid-State Circuits (263)
Bibliography

Wei, S.-J., & Lin, H. C. (1992). Multivalued SRAM cell using resonant tunneling diodes. IEEE Journal of Solid-State Circuits, 27(2), 212–216.

Authors 2
  1. S.-J. Wei (first)
  2. H.C. Lin (additional)
References 13 Referenced 59
  1. 10.1109/ISCAS.1991.176157
  2. 10.1109/ISMVL.1991.130728
  3. 10.1109/55.733
  4. 10.1063/1.99565
  5. 10.1109/EDL.1987.26637 / IEEE Electron Device Letters / resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications by capasso (1987)
  6. 10.1063/1.97923
  7. 10.1109/T-ED.1987.23215 / IEEE Transactions on Electron Devices / resonant tunneling device with multiple negative differential resistance: digital and signal processing applications with reduced circuit complexity by sen (1987)
  8. 10.1109/ISMVL.1990.122619
  9. 10.1109/4.68130
  10. 10.1109/CORNEL.1989.79843
  11. 10.1049/el:19880461 / Electronics Letters / eleven-bit parity generator with a single, vertically integrated resonant tunnelling device by lakhani (1988)
  12. 10.1109/TC.1981.1675860
  13. 10.1109/TEC.1960.5221600
Dates
Type When
Created 22 years, 11 months ago (Aug. 24, 2002, 4:26 p.m.)
Deposited 3 years, 8 months ago (Nov. 29, 2021, 3:06 p.m.)
Indexed 4 months ago (April 21, 2025, 12:25 a.m.)
Issued 33 years, 7 months ago (Jan. 1, 1992)
Published 33 years, 7 months ago (Jan. 1, 1992)
Published Print 33 years, 7 months ago (Jan. 1, 1992)
Funders 0

None

@article{Wei_1992, title={Multivalued SRAM cell using resonant tunneling diodes}, volume={27}, ISSN={0018-9200}, url={http://dx.doi.org/10.1109/4.127345}, DOI={10.1109/4.127345}, number={2}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Wei, S.-J. and Lin, H.C.}, year={1992}, pages={212–216} }