Crossref
journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Journal of Solid-State Circuits (263)
References
13
Referenced
59
10.1109/ISCAS.1991.176157
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10.1109/EDL.1987.26637
/ IEEE Electron Device Letters / resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications by capasso (1987)10.1063/1.97923
10.1109/T-ED.1987.23215
/ IEEE Transactions on Electron Devices / resonant tunneling device with multiple negative differential resistance: digital and signal processing applications with reduced circuit complexity by sen (1987)10.1109/ISMVL.1990.122619
10.1109/4.68130
10.1109/CORNEL.1989.79843
10.1049/el:19880461
/ Electronics Letters / eleven-bit parity generator with a single, vertically integrated resonant tunnelling device by lakhani (1988)10.1109/TC.1981.1675860
10.1109/TEC.1960.5221600
Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Aug. 24, 2002, 4:26 p.m.) |
Deposited | 3 years, 8 months ago (Nov. 29, 2021, 3:06 p.m.) |
Indexed | 4 months ago (April 21, 2025, 12:25 a.m.) |
Issued | 33 years, 7 months ago (Jan. 1, 1992) |
Published | 33 years, 7 months ago (Jan. 1, 1992) |
Published Print | 33 years, 7 months ago (Jan. 1, 1992) |
@article{Wei_1992, title={Multivalued SRAM cell using resonant tunneling diodes}, volume={27}, ISSN={0018-9200}, url={http://dx.doi.org/10.1109/4.127345}, DOI={10.1109/4.127345}, number={2}, journal={IEEE Journal of Solid-State Circuits}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Wei, S.-J. and Lin, H.C.}, year={1992}, pages={212–216} }