Crossref
journal-article
Institute of Electrical and Electronics Engineers (IEEE)
IEEE Journal of Selected Topics in Quantum Electronics (263)
References
17
Referenced
178
10.1063/1.96549
10.1143/jjap.30.l1705
10.1143/JJAP.28.L2112
10.1143/JJAP.31.1258
10.1016/0022-0248(91)90818-P
{'key': 'ref6', 'first-page': '851', 'article-title': 'GaN-based UV/blue light emitting devices', 'volume-title': 'Inst. Phys. Conf. Ser.', 'volume': '129', 'author': 'Akasaki'}
/ Inst. Phys. Conf. Ser. / GaN-based UV/blue light emitting devices by Akasaki10.1063/1.111832
10.1016/0022-0248(93)90352-W
{'key': 'ref9', 'first-page': '45', 'article-title': 'GaN-based blue light emitting diodes', 'volume-title': 'Proc. Topical Workshop on III–V Nitrides (TWN’95)', 'author': 'Koike'}
/ Proc. Topical Workshop on III–V Nitrides (TWN’95) / GaN-based blue light emitting diodes by Koike10.1557/PROC-395-889
10.1063/1.102530
10.1143/JJAP.30.1924
10.1063/1.354486
10.1143/JJAP.34.L797
10.1063/1.116094
{'key': 'ref16', 'first-page': '36', 'article-title': 'GaInN/GaN multiple quantum wells green LEDs', 'volume-title': 'Proc. SPIE International Society for Optical Engineering', 'volume': '3002', 'author': 'Koike'}
/ Proc. SPIE International Society for Optical Engineering / GaInN/GaN multiple quantum wells green LEDs by Koike{'key': 'ref17', 'first-page': '24', 'article-title': 'GaN-based MQW light-emitting devices', 'volume': '3938', 'author': 'Koike', 'year': '2000', 'journal-title': 'SPIE International Society for Optical Engineering'}
/ SPIE International Society for Optical Engineering / GaN-based MQW light-emitting devices by Koike (2000)
Dates
Type | When |
---|---|
Created | 22 years, 11 months ago (Aug. 24, 2002, 4:14 p.m.) |
Deposited | 4 months ago (April 20, 2025, 12:35 a.m.) |
Indexed | 2 weeks, 1 day ago (Aug. 7, 2025, 4:52 a.m.) |
Issued | 23 years, 7 months ago (Jan. 1, 2002) |
Published | 23 years, 7 months ago (Jan. 1, 2002) |
Published Print | 23 years, 7 months ago (Jan. 1, 2002) |
@article{Koike_2002, title={Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications}, volume={8}, ISSN={1077-260X}, url={http://dx.doi.org/10.1109/2944.999180}, DOI={10.1109/2944.999180}, number={2}, journal={IEEE Journal of Selected Topics in Quantum Electronics}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Koike, M. and Shibata, N. and Kato, H. and Takahashi, Y.}, year={2002}, pages={271–277} }