DOI: 10.1109/22.3475. Noise modeling and measurement techniques (HEMTs)

Noise modeling and measurement techniques (HEMTs)

10.1109/22.3475

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Microwave Theory and Techniques (263)

Bibliography

Cappy, A. (1988). Noise modeling and measurement techniques (HEMTs). IEEE Transactions on Microwave Theory and Techniques, 36(1), 1â10.

Authors 1

A. Cappy (first)

References 45 Referenced 214

10.1109/MCS.1984.1113610
10.1109/TMTT.1977.1129282 / IEEE Trans Microwave Theory Tech / A generalization of the TSD network calibration procedure, coupling n port scattering parameter measurements affected by leakage errors by speciale (1977)
10.1109/TMTT.1979.1129728
10.1109/PROC.1969.7311
10.1109/TMTT.1981.1130335
10.1143/JJAP.24.L431
10.1109/TMTT.1984.1132658
10.1109/PROC.1979.11458
10.1109/EUMA.1979.332661
10.1109/TMTT.1979.1129680
10.1109/T-ED.1985.22244 / IEEE Transactions on Electron Devices / a monte carlo particle study of the intrinsic noise figure in gaas mesfet's by moglestue (1985)
10.1109/T-ED.1986.22537 / IEEE Transactions on Electron Devices / design of tegfet devices for optimum low-noise high-frequency operation by jay (1986)
10.1109/T-ED.1967.15964 / IEEE Transactions on Electron Devices / high-frequency noise of the junction field-effect transistor by klaassen (1967)
10.1109/T-ED.1972.17473 / IEEE Transactions on Electron Devices / noise behavior of gaas field-effect transistors with short gate lengths by baechtold (1972)
{'key': 'ref13', 'article-title': "Simple models for high-frequency MESFET's and comparison with experimental results", 'author': 'oxley', 'year': '1986', 'journal-title': 'Proc IEE MOA'} / Proc IEE MOA / Simple models for high-frequency MESFET's and comparison with experimental results by oxley (1986)
10.1109/EDL.1985.26219 / IEEE Electron Device Letters / millimeter-wave low-noise high electron mobility transistors by chao (1985)
10.1109/EDL.1985.26021 / IEEE Electron Device Letters / millimeter-wave gaas fet's prepared by mbe by kim (1985)
10.1109/EDL.1982.25614 / IEEE Electron Device Letters / quarter micron low noise gaas fet's by chye (1982)
{'key': 'ref17', 'article-title': 'Etude de la dynamique des electrons � deux dimensions dans les h�terojonctions', 'author': 'zimmermann', 'year': '0', 'journal-title': 'Rev Phys Appl'} / Rev Phys Appl / Etude de la dynamique des electrons � deux dimensions dans les h�terojonctions by zimmermann (0)
10.1109/TMTT.1979.1129694
10.1016/0038-1101(85)90016-4
10.1103/PhysRevB.30.7021
10.1109/T-ED.1986.22692 / IEEE Transactions on Electron Devices / the dc, ac, and noise properties of the gaas/algaas modulation-doped field-effect transistor channel by whiteside (1986)
10.1109/EDL.1984.25812 / IEEE Electron Device Letters / deep-level analysis in (alga)as—gaas 2-d electron gas devices by means of low-frequency noise measurements by loreck (1984)
10.1109/T-ED.1986.22436 / IEEE Transactions on Electron Devices / the noise properties of high electron mobility transistors by brookes (1986)
10.1109/T-ED.1981.20431 / IEEE Transactions on Electron Devices / noise modeling in submicrometer-gate fet's by carnez (1981)
10.1143/JJAP.22.L627
10.1109/T-ED.1985.22417 / IEEE Transactions on Electron Devices / noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors by cappy (1985)
10.1109/PROC.1963.1849
10.1109/JRPROC.1962.288221
10.1016/S0065-2539(08)61205-6 / Advances in Electronics and Electron Physics / Signal and noise properties of gallium arsenide field effect transistors by pucel (1974)
10.1109/EDL.1985.26186
10.1109/JRPROC.1956.274998
10.1109/T-ED.1985.21901 / IEEE Transactions on Electron Devices / two-layer model for source resistance in selectively doped heterojunction transistors by feuer (1985)
10.1007/978-3-642-82979-6_29
10.1049/el:19860443
10.1049/el:19850381
10.1109/T-ED.1986.22539 / IEEE Transactions on Electron Devices / a new low-noise algaas/gaas 2deg fet with a surface undoped layer by hida (1986)
10.1109/TMTT.1968.1126656
{'key': 'ref41', 'article-title': 'Low noise high electron mobility transistor', 'author': 'kamei', 'year': '1984', 'journal-title': 'Proc 11th GaAs and Related Compounds Conf'} / Proc 11th GaAs and Related Compounds Conf / Low noise high electron mobility transistor by kamei (1984)
10.1109/T-ED.1986.22469 / IEEE Transactions on Electron Devices / noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 k by pospieszalski (1986)
10.1109/MWSYM.1983.1130984
10.1109/T-ED.1986.22534 / IEEE Transactions on Electron Devices / correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas fet's by dieudonne (1986)
10.1109/T-ED.1986.22867 / IEEE Transactions on Electron Devices / low-noise hemt using mocvd by tanaka (1986)
10.1109/EDL.1985.26190 / IEEE Electron Device Letters / noise behavior of 1-µm gate-length modulation-doped fet's from 10<sup>-2</sup>to 10<sup>8</sup>hz by liu (1985)

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 6:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 3:02 p.m.)
Indexed	3 months ago (May 18, 2025, 1:21 a.m.)
Issued	37 years, 7 months ago (Jan. 1, 1988)
Published	37 years, 7 months ago (Jan. 1, 1988)
Published Print	37 years, 7 months ago (Jan. 1, 1988)

Funders 0

None

BibTeX

@article{Cappy_1988, title={Noise modeling and measurement techniques (HEMTs)}, volume={36}, ISSN={0018-9480}, url={http://dx.doi.org/10.1109/22.3475}, DOI={10.1109/22.3475}, number={1}, journal={IEEE Transactions on Microwave Theory and Techniques}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Cappy, A.}, year={1988}, pages={1–10} }

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