DOI: 10.1109/16.906439. Undoped AlGaN/GaN HEMTs for microwave power amplification

Undoped AlGaN/GaN HEMTs for microwave power amplification

10.1109/16.906439

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Eastman, L. F., Tilak, V., Smart, J., Green, B. M., Chumbes, E. M., Dimitrov, R., Hyungtak Kim, Ambacher, O. S., Weimann, N., Prunty, T., Murphy, M., Schaff, W. J., & Shealy, J. R. (2001). Undoped AlGaN/GaN HEMTs for microwave power amplification. IEEE Transactions on Electron Devices, 48(3), 479â485.

Authors 13

L.F. Eastman (first)
V. Tilak (additional)
J. Smart (additional)
B.M. Green (additional)
E.M. Chumbes (additional)
R. Dimitrov (additional)
Hyungtak Kim (additional)
O.S. Ambacher (additional)
N. Weimann (additional)
T. Prunty (additional)
M. Murphy (additional)
W.J. Schaff (additional)
J.R. Shealy (additional)

References 23 Referenced 335

10.1063/1.369664
10.1063/1.371240
10.1103/PhysRevB.55.4689
10.1103/PhysRevB.59.9748
10.1063/1.366585
10.1063/1.122012
10.1103/PhysRevLett.82.1237
10.1063/1.121268
10.1063/1.123853
10.1063/1.123018
{'journal-title': 'Increase of AlGaN/GaN 2DEG density with optical excitation by photons with > 2.2 eV energy', 'author': 'Ambacher', 'key': 'ref11'} / Increase of AlGaN/GaN 2DEG density with optical excitation by photons with > 2.2 eV energy by Ambacher
10.1557/proc-572-547
10.1109/55.843146
{'article-title': 'Traps in GaN HEMT’s: Where are they and how do we find them?', 'volume-title': 'Proc. 6th GaN Workshop', 'author': 'Binari', 'key': 'ref14'} / Proc. 6th GaN Workshop / Traps in GaN HEMT’s: Where are they and how do we find them? by Binari
{'volume-title': 'Electron transport and device modeling in Group-III nitrides', 'author': 'Foutz', 'key': 'ref15'} / Electron transport and device modeling in Group-III nitrides by Foutz
10.1116/1.590733
10.1143/JJAP.38.4962
10.1063/1.372353
10.1063/1.371869
10.1063/1.125418
10.1063/1.124384
10.1063/1.122312
10.1063/1.125523

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 2:17 p.m.)
Deposited	4 months, 3 weeks ago (March 29, 2025, 6:21 a.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:08 a.m.)
Issued	24 years, 5 months ago (March 1, 2001)
Published	24 years, 5 months ago (March 1, 2001)
Published Print	24 years, 5 months ago (March 1, 2001)

Funders 0

None

BibTeX

@article{Eastman_2001, title={Undoped AlGaN/GaN HEMTs for microwave power amplification}, volume={48}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.906439}, DOI={10.1109/16.906439}, number={3}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Eastman, L.F. and Tilak, V. and Smart, J. and Green, B.M. and Chumbes, E.M. and Dimitrov, R. and Hyungtak Kim and Ambacher, O.S. and Weimann, N. and Prunty, T. and Murphy, M. and Schaff, W.J. and Shealy, J.R.}, year={2001}, month=mar, pages={479–485} }

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