DOI: 10.1109/16.777166. Models for electron and hole mobilities in MOS accumulation layers

Models for electron and hole mobilities in MOS accumulation layers

10.1109/16.777166

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Mudanai, S., Chindalore, G. L., Shih, W.-K., Wang, H., Ouyang, Q., Tasch, A. F., Maziar, C. M., & Banerjee, S. K. (1999). Models for electron and hole mobilities in MOS accumulation layers. IEEE Transactions on Electron Devices, 46(8), 1749â1759.

Authors 8

S. Mudanai (first)
G.L. Chindalore (additional)
W.-K. Shih (additional)
H. Wang (additional)
Q. Ouyang (additional)
A.F. Tasch (additional)
C.M. Maziar (additional)
S.K. Banerjee (additional)

References 18 Referenced 26

10.7567/JJAPS.2S2.367
10.1016/0039-6028(71)90199-3
{'key': 'ref12', 'author': 'rashed', 'year': '1993', 'journal-title': 'Development of a particle simulator for the study of electrons emitted from laser irradiated metal and semiconductor surface'} / Development of a particle simulator for the study of electrons emitted from laser irradiated metal and semiconductor surface by rashed (1993)
10.1103/PhysRevB.38.9721
{'key': 'ref14', 'author': 'ridley', 'year': '1982', 'journal-title': 'Quantum Process in Semiconductors'} / Quantum Process in Semiconductors by ridley (1982)
{'key': 'ref15', 'first-page': '18', 'article-title': 'characterization of the electron mobility in the inverted <formula><tex>$\\langle$</tex></formula>100<formula><tex>$\\rangle$</tex></formula> silicon surface', 'author': 'sabnis', 'year': '1979', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / characterization of the electron mobility in the inverted <formula><tex>$\langle$</tex></formula>100<formula><tex>$\rangle$</tex></formula> silicon surface by sabnis (1979)
10.1109/16.24356
10.1109/PROC.1967.6123
{'key': 'ref18', 'article-title': 'enhanced performance of accumulation mode 0.5 <formula><tex>$\\mu$</tex></formula>m cmos/soi operated at 300 k and 85 k', 'author': 'wang', 'year': '1991', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / enhanced performance of accumulation mode 0.5 <formula><tex>$\mu$</tex></formula>m cmos/soi operated at 300 k and 85 k by wang (1991)
10.1109/16.658687
{'key': 'ref3', 'author': 'lundstrom', 'year': '1990', 'journal-title': 'Fundamentals of Carrier Transport'} / Fundamentals of Carrier Transport by lundstrom (1990)
10.1109/T-ED.1980.20063
10.1109/16.766900
10.1109/IEDM.1988.32840
10.1109/T-ED.1983.21424
10.1109/16.65749
10.1016/0038-1101(91)90123-G
10.1109/55.568762

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:54 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed	4 months, 3 weeks ago (March 30, 2025, 5:47 a.m.)
Issued	26 years, 7 months ago (Jan. 1, 1999)
Published	26 years, 7 months ago (Jan. 1, 1999)
Published Print	26 years, 7 months ago (Jan. 1, 1999)

Funders 0

None

BibTeX

@article{Mudanai_1999, title={Models for electron and hole mobilities in MOS accumulation layers}, volume={46}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.777166}, DOI={10.1109/16.777166}, number={8}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Mudanai, S. and Chindalore, G.L. and Shih, W.-K. and Wang, H. and Ouyang, Q. and Tasch, A.F. and Maziar, C.M. and Banerjee, S.K.}, year={1999}, pages={1749–1759} }

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