DOI: 10.1109/16.772508. The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

10.1109/16.772508

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Cheng, B., Cao, M., Rao, R., Inani, A., Vande Voorde, P., Greene, W. M., Stork, J. M. C., Zhiping Yu, Zeitzoff, P. M., & Woo, J. C. S. (1999). The impact of high-Îº gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs. IEEE Transactions on Electron Devices, 46(7), 1537â1544.

Authors 10

B. Cheng (first)
M. Cao (additional)
R. Rao (additional)
A. Inani (additional)
P. Vande Voorde (additional)
W.M. Greene (additional)
J.M.C. Stork (additional)
Zhiping Yu (additional)
P.M. Zeitzoff (additional)
J.C.S. Woo (additional)

References 21 Referenced 259

10.1109/16.678572
10.1109/55.709635 / IEEE Electron Devices Lett / leakage current comparison between ultra-thin ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films and conventional gate dielectrics by lu (1998)
{'key': 'ref12', 'first-page': '319', 'article-title': 'gate oxide scaling limits and projection', 'author': 'hu', 'year': '1996', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / gate oxide scaling limits and projection by hu (1996)
{'key': 'ref13', 'first-page': '345', 'article-title': 'novel polysilicon/tin stacked-gate structure for fully-depleted soi/cmos', 'author': 'hwang', 'year': '1992', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / novel polysilicon/tin stacked-gate structure for fully-depleted soi/cmos by hwang (1992)
10.1109/16.622603
{'key': 'ref15', 'year': '0', 'journal-title': 'TMA MEDICI Two-dimensional device simulation program (ver 2 3 1)'} / TMA MEDICI Two-dimensional device simulation program (ver 2 3 1) (0)
10.1109/IEDM.1996.554103
10.1016/0038-1101(94)90005-1
{'key': 'ref18', 'year': '1997', 'journal-title': 'The National Technology Roadmap For Semiconductors Technology Needs'} / The National Technology Roadmap For Semiconductors Technology Needs (1997)
{'key': 'ref19', 'article-title': "gate stack architecture analysis and channel engineering in deep sub-micron mosfet's", 'author': 'inani', 'year': '0', 'journal-title': 'Japanese J Applied Physics'} / Japanese J Applied Physics / gate stack architecture analysis and channel engineering in deep sub-micron mosfet's by inani (0)
10.1109/16.554800
10.1063/1.367277
{'key': 'ref6', 'first-page': '24', 'article-title': 'a stack capacitor with (ba, sr)tio<formula><tex>$_3$</tex></formula> dielectric and pt electrodes for 1 giga-bit density dram', 'author': 'park', 'year': '1996', 'journal-title': 'Proc Symp VLSI Technology'} / Proc Symp VLSI Technology / a stack capacitor with (ba, sr)tio<formula><tex>$_3$</tex></formula> dielectric and pt electrodes for 1 giga-bit density dram by park (1996)
{'key': 'ref5', 'first-page': '109', 'article-title': 'high-k dielectric materials for dram capacitors', 'author': 'kotecki', 'year': '1996', 'journal-title': 'Semicond Int'} / Semicond Int / high-k dielectric materials for dram capacitors by kotecki (1996)
{'key': 'ref8', 'first-page': '94', 'article-title': "performance considerations in using high-k dielectrics for deep sub-micron mosfet's", 'author': 'inani', 'year': '1998', 'journal-title': 'Ext Abstr SSDM`98'} / Ext Abstr SSDM`98 / performance considerations in using high-k dielectrics for deep sub-micron mosfet's by inani (1998)
{'key': 'ref7', 'first-page': '308', 'article-title': 'Design Considerations of High-K Gate Dielectrics and Metal Gate Electrodes for Sub-0.1 um MOSFETs', 'author': 'cheng', 'year': '1998', 'journal-title': '28th European Solid-State Device Research Conference ESSDERC'} / 28th European Solid-State Device Research Conference ESSDERC / Design Considerations of High-K Gate Dielectrics and Metal Gate Electrodes for Sub-0.1 um MOSFETs by cheng (1998)
10.1109/16.506774 / IEEE Trans on Electron Devices / 1.5 nm direct-tunneling gate oxide si mosfet's by momose (1996)
10.1109/55.568766
10.1109/16.737469
10.1109/VLSIT.1998.689262
10.1109/VLSIT.1997.623742

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed	3 weeks, 5 days ago (July 27, 2025, 3:15 a.m.)
Issued	26 years, 1 month ago (July 1, 1999)
Published	26 years, 1 month ago (July 1, 1999)
Published Print	26 years, 1 month ago (July 1, 1999)

Funders 0

None

BibTeX

@article{Cheng_1999, title={The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs}, volume={46}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.772508}, DOI={10.1109/16.772508}, number={7}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Cheng, B. and Cao, M. and Rao, R. and Inani, A. and Vande Voorde, P. and Greene, W.M. and Stork, J.M.C. and Zhiping Yu and Zeitzoff, P.M. and Woo, J.C.S.}, year={1999}, month=jul, pages={1537–1544} }

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