DOI: 10.1109/16.678572. Modeled tunnel currents for high dielectric constant dielectrics

Modeled tunnel currents for high dielectric constant dielectrics

10.1109/16.678572

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., Hauser, J. R., & Wortman, J. J. (1998). Modeled tunnel currents for high dielectric constant dielectrics. IEEE Transactions on Electron Devices, 45(6), 1350â1355.

Authors 8

E.M. Vogel (first)
K.Z. Ahmed (additional)
B. Hornung (additional)
W.K. Henson (additional)
P.K. McLarty (additional)
G. Lucovsky (additional)
J.R. Hauser (additional)
J.J. Wortman (additional)

References 23 Referenced 144

10.1109/T-ED.1983.21442
10.1063/1.356116
10.1103/PhysRev.123.85
{'key': 'ref13', 'author': 'merzbacher', 'year': '1961', 'journal-title': 'Quantum Mechanics'} / Quantum Mechanics by merzbacher (1961)
10.1109/55.296216
10.1016/0040-6090(95)08234-4 / Thin Solid Films / dielectric constants of ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> thin films deposited by r.f. sputtering by shibata (1996)
10.1016/0040-6090(94)06388-5
10.1016/0040-6090(94)06322-2 / Thin Solid Films / rapid thermal processed thin films of reactively sputtered ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> by pignolet (1995)
10.1016/0924-4247(95)01060-2 / Sens Actuators A / conduction properties of amorphous ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films prepared by plasma enhanced chemical vapor deposition by autran (1995)
10.1063/1.362510 / J Appl Phys / defect states responsible for leakage current in ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films on si due to si contamination from the substrate by lau (1996)
10.1109/16.506774 / IEEE Trans on Electron Devices / 1.5 nm direct-tunneling gate oxide si mosfet's by momose (1996)
10.1063/1.117072
10.1063/1.106721 / Appl Phys Lett / metal-oxide-semiconductor characteristics of chemical vapor deposited ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films by lo (1992)
10.1109/16.554800
{'key': 'ref8', 'first-page': '226', 'article-title': 'effects of water vapor anneal on mis devices made of nitrided gate dielectrics', 'author': 'wang', 'year': '0', 'journal-title': '1996 Symp VLSI Technol Dig Tech Papers'} / 1996 Symp VLSI Technol Dig Tech Papers / effects of water vapor anneal on mis devices made of nitrided gate dielectrics by wang (0)
10.1143/JJAP.34.955
10.1016/0038-1101(94)00269-L
{'key': 'ref9', 'author': 'sze', 'year': '1981', 'journal-title': 'Physics of Semiconductor Devices'} / Physics of Semiconductor Devices by sze (1981)
{'key': 'ref1', 'year': '1997', 'journal-title': 'The National Technology Roadmap for Semiconductors'} / The National Technology Roadmap for Semiconductors (1997)
10.1109/16.485657
10.1109/16.464405 / IEEE Transactions on Electron Devices / dram plate electrode bias optimization for reducing leakage current in uv-o<formula><tex>$_3$</tex></formula> and o<formula><tex>$_2$</tex></formula> annealed cvd deposited ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> dielectric films by madan (1995)
10.1063/1.115627 / Appl Phys Lett / nondestructive measurement of interfacial sio<formula><tex>$_2$</tex></formula> films formed during deposition and annealing of ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> by devine (1996)
10.1109/16.477592

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed	4 months ago (April 21, 2025, 12:25 a.m.)
Issued	27 years, 2 months ago (June 1, 1998)
Published	27 years, 2 months ago (June 1, 1998)
Published Print	27 years, 2 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Vogel_1998, title={Modeled tunnel currents for high dielectric constant dielectrics}, volume={45}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.678572}, DOI={10.1109/16.678572}, number={6}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Vogel, E.M. and Ahmed, K.Z. and Hornung, B. and Henson, W.K. and McLarty, P.K. and Lucovsky, G. and Hauser, J.R. and Wortman, J.J.}, year={1998}, month=jun, pages={1350–1355} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        21
      ]
    ],
    "date-time": "2025-04-21T04:25:21Z",
    "timestamp": 1745209521938
  },
  "reference-count": 23,
  "publisher": "Institute of Electrical and Electronics Engineers (IEEE)",
  "issue": "6",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            1998,
            6,
            1
          ]
        ],
        "date-time": "1998-06-01T00:00:00Z",
        "timestamp": 896659200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        6
      ]
    ]
  },
  "DOI": "10.1109/16.678572",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        8,
        24
      ]
    ],
    "date-time": "2002-08-24T20:40:30Z",
    "timestamp": 1030221630000
  },
  "page": "1350-1355",
  "source": "Crossref",
  "is-referenced-by-count": 144,
  "title": "Modeled tunnel currents for high dielectric constant dielectrics",
  "prefix": "10.1109",
  "volume": "45",
  "author": [
    {
      "given": "E.M.",
      "family": "Vogel",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "K.Z.",
      "family": "Ahmed",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "B.",
      "family": "Hornung",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "W.K.",
      "family": "Henson",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "P.K.",
      "family": "McLarty",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "G.",
      "family": "Lucovsky",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.R.",
      "family": "Hauser",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "J.J.",
      "family": "Wortman",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "263",
  "reference": [
    {
      "key": "ref10",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/T-ED.1983.21442"
    },
    {
      "key": "ref11",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.356116"
    },
    {
      "key": "ref12",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRev.123.85"
    },
    {
      "key": "ref13",
      "author": "merzbacher",
      "year": "1961",
      "journal-title": "Quantum Mechanics"
    },
    {
      "key": "ref14",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/55.296216"
    },
    {
      "key": "ref15",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/0040-6090(95)08234-4",
      "article-title": "dielectric constants of ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> thin films deposited by r.f. sputtering",
      "volume": "277",
      "author": "shibata",
      "year": "1996",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "ref16",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0040-6090(94)06388-5"
    },
    {
      "key": "ref17",
      "doi-asserted-by": "crossref",
      "first-page": "230",
      "DOI": "10.1016/0040-6090(94)06322-2",
      "article-title": "rapid thermal processed thin films of reactively sputtered ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula>",
      "volume": "258",
      "author": "pignolet",
      "year": "1995",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "ref18",
      "doi-asserted-by": "crossref",
      "first-page": "5",
      "DOI": "10.1016/0924-4247(95)01060-2",
      "article-title": "conduction properties of amorphous ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films prepared by plasma enhanced chemical vapor deposition",
      "volume": "51",
      "author": "autran",
      "year": "1995",
      "journal-title": "Sens Actuators A"
    },
    {
      "key": "ref19",
      "doi-asserted-by": "crossref",
      "first-page": "8841",
      "DOI": "10.1063/1.362510",
      "article-title": "defect states responsible for leakage current in ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films on si due to si contamination from the substrate",
      "volume": "79",
      "author": "lau",
      "year": "1996",
      "journal-title": "J Appl Phys"
    },
    {
      "key": "ref4",
      "doi-asserted-by": "crossref",
      "first-page": "1233",
      "DOI": "10.1109/16.506774",
      "article-title": "1.5 nm direct-tunneling gate oxide si mosfet's",
      "volume": "43",
      "author": "momose",
      "year": "1996",
      "journal-title": "IEEE Trans on Electron Devices"
    },
    {
      "key": "ref3",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.117072"
    },
    {
      "key": "ref6",
      "doi-asserted-by": "crossref",
      "first-page": "3286",
      "DOI": "10.1063/1.106721",
      "article-title": "metal-oxide-semiconductor characteristics of chemical vapor deposited ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> films",
      "volume": "60",
      "author": "lo",
      "year": "1992",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "ref5",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.554800"
    },
    {
      "key": "ref8",
      "first-page": "226",
      "article-title": "effects of water vapor anneal on mis devices made of nitrided gate dielectrics",
      "author": "wang",
      "year": "0",
      "journal-title": "1996 Symp VLSI Technol Dig Tech Papers"
    },
    {
      "key": "ref7",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.34.955"
    },
    {
      "key": "ref2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/0038-1101(94)00269-L"
    },
    {
      "key": "ref9",
      "author": "sze",
      "year": "1981",
      "journal-title": "Physics of Semiconductor Devices"
    },
    {
      "key": "ref1",
      "year": "1997",
      "journal-title": "The National Technology Roadmap for Semiconductors"
    },
    {
      "key": "ref20",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.485657"
    },
    {
      "key": "ref22",
      "doi-asserted-by": "crossref",
      "first-page": "1871",
      "DOI": "10.1109/16.464405",
      "article-title": "dram plate electrode bias optimization for reducing leakage current in uv-o<formula><tex>$_3$</tex></formula> and o<formula><tex>$_2$</tex></formula> annealed cvd deposited ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula> dielectric films",
      "volume": "42",
      "author": "madan",
      "year": "1995",
      "journal-title": "IEEE Transactions on Electron Devices"
    },
    {
      "key": "ref21",
      "doi-asserted-by": "crossref",
      "first-page": "1924",
      "DOI": "10.1063/1.115627",
      "article-title": "nondestructive measurement of interfacial sio<formula><tex>$_2$</tex></formula> films formed during deposition and annealing of ta<formula><tex>$_2$</tex></formula>o<formula><tex>$_5$</tex></formula>",
      "volume": "68",
      "author": "devine",
      "year": "1996",
      "journal-title": "Appl Phys Lett"
    },
    {
      "key": "ref23",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.477592"
    }
  ],
  "container-title": "IEEE Transactions on Electron Devices",
  "original-title": [],
  "link": [
    {
      "URL": "http://xplorestaging.ieee.org/ielx4/16/14932/00678572.pdf?arnumber=678572",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2021,
        11,
        29
      ]
    ],
    "date-time": "2021-11-29T19:08:17Z",
    "timestamp": 1638212897000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "http://ieeexplore.ieee.org/document/678572/"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        6
      ]
    ]
  },
  "references-count": 23,
  "journal-issue": {
    "issue": "6"
  },
  "URL": "http://dx.doi.org/10.1109/16.678572",
  "relation": {},
  "ISSN": [
    "0018-9383"
  ],
  "subject": [],
  "container-title-short": "IEEE Trans. Electron Devices",
  "published": {
    "date-parts": [
      [
        1998,
        6
      ]
    ]
  }
}