DOI: 10.1109/16.554800. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

10.1109/16.554800

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Campbell, S. A., Gilmer, D. C., Xiao-Chuan Wang, Ming-Ta Hsieh, Hyeon-Seag Kim, Gladfelter, W. L., & Jinhua Yan. (1997). MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics. IEEE Transactions on Electron Devices, 44(1), 104â109.

Authors 7

S.A. Campbell (first)
D.C. Gilmer (additional)
Xiao-Chuan Wang (additional)
Ming-Ta Hsieh (additional)
Hyeon-Seag Kim (additional)
W.L. Gladfelter (additional)
Jinhua Yan (additional)

References 18 Referenced 367

10.1149/1.2069068 / Electrochem Soc / compositional analysis and capacitance-volatge properties of tio<formula><tex>$_2$</tex></formula> films by low pressure metal-organic chemical vapor deposition by won (1992)
10.1063/1.111898
10.1149/1.2407298
{'key': 'ref13', 'author': 'schroder', 'year': '1990', 'journal-title': 'Semiconductor Material and Device Characterization'} / Semiconductor Material and Device Characterization by schroder (1990)
10.1002/j.1538-7305.1967.tb01727.x
10.1063/1.350278
10.1016/0038-1101(94)E0033-B
10.1109/T-ED.1980.20063
10.1109/16.81627
{'key': 'ref4', 'first-page': '725', 'article-title': 'thin high-dielectric tio<formula><tex>$_2$</tex></formula> films prepared by low pressure mocvd', 'volume': '19', 'author': 'rausch', 'year': '1992', 'journal-title': 'Engineering'} / Engineering / thin high-dielectric tio<formula><tex>$_2$</tex></formula> films prepared by low pressure mocvd by rausch (1992)
10.1143/JJAP.25.1288
10.1016/0038-1101(78)90308-8
10.1149/1.2056076
10.1116/1.589214 / J Vac Sci Technol B / structural and electrical characterization of tio<formula><tex>$_2$</tex></formula> grown from titanium tetrakis-isopropoxide (ttip) and ttip/h<formula><tex>$_2$</tex></formula>o ambients by yan (1996)
10.1103/PhysRevB.18.5606
{'key': 'ref2', 'author': 'yan', 'year': '1996', 'journal-title': 'Electrical properties of titanium dioxide prepared by metalorganic chemical vapor deposition as a new gate dielectric'} / Electrical properties of titanium dioxide prepared by metalorganic chemical vapor deposition as a new gate dielectric by yan (1996)
{'key': 'ref1', 'author': 'duffy', 'year': '1990', 'journal-title': 'Bonding Energy Levels And Bands in Inorganic Solids'} / Bonding Energy Levels And Bands in Inorganic Solids by duffy (1990)
10.1016/0040-6090(94)90640-8

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:54 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:07 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 8:22 p.m.)
Issued	28 years, 7 months ago (Jan. 1, 1997)
Published	28 years, 7 months ago (Jan. 1, 1997)
Published Print	28 years, 7 months ago (Jan. 1, 1997)

Funders 0

None

BibTeX

@article{Campbell_1997, title={MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics}, volume={44}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.554800}, DOI={10.1109/16.554800}, number={1}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Campbell, S.A. and Gilmer, D.C. and Xiao-Chuan Wang and Ming-Ta Hsieh and Hyeon-Seag Kim and Gladfelter, W.L. and Jinhua Yan}, year={1997}, pages={104–109} }

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