DOI: 10.1109/16.310117. Room-temperature single-electron memory

10.1109/16.310117

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Yano, K., Ishii, T., Hashimoto, T., Kobayashi, T., Murai, F., & Seki, K. (1994). Room-temperature single-electron memory. IEEE Transactions on Electron Devices, 41(9), 1628â1638.

Authors 6

K. Yano (first)
T. Ishii (additional)
T. Hashimoto (additional)
T. Kobayashi (additional)
F. Murai (additional)
K. Seki (additional)

References 21 Referenced 353

{'key': 'ref10', 'author': 'averin', 'year': '1991', 'journal-title': 'Single-charge tunneling'} / Single-charge tunneling by averin (1991)
10.1109/IEDM.1992.307423 / IEEE Int Electron Devices Meet by yano (1992)
10.1002/adma.19930050917
{'key': 'ref13', 'first-page': '726', 'author': 'sch�nenberger', 'year': '1992', 'journal-title': 'Proc 1992 Int Conf Solid State Devices and Materials'} / Proc 1992 Int Conf Solid State Devices and Materials by sch�nenberger (1992)
10.1049/el:19930258
10.1109/IEDM.1993.347292 / IEEE Intl Electron Devices Meeting 1993 by yano (1993)
10.1080/00018738900101122
{'key': 'ref17', 'first-page': '496', 'volume': '45', 'author': 'kuzmin', 'year': '1987', 'journal-title': 'LETP Lett'} / LETP Lett by kuzmin (1987)
10.1103/PhysRevLett.65.771
10.1103/PhysRevLett.20.1504
{'key': 'ref3', 'year': '1991', 'journal-title': 'Single-charge tunneling'} / Single-charge tunneling (1991)
10.1103/PhysRevLett.62.2539
10.1103/PhysRevLett.59.109
10.1103/PhysRevLett.67.1626
10.1103/PhysRevLett.64.2691
{'key': 'ref2', 'author': 'likharev', 'year': '1991', 'journal-title': 'Granular Nanoelectronics'} / Granular Nanoelectronics by likharev (1991)
{'key': 'ref1', 'author': 'averin', 'year': '1991', 'journal-title': 'Quantum Effects in Small Disordered Systems'} / Quantum Effects in Small Disordered Systems by averin (1991)
10.1103/PhysRevLett.67.3148
10.1103/PhysRevLett.71.3198
{'key': 'ref11c', 'author': 'nakazato', 'year': '0', 'journal-title': 'J Appl Phys'} / J Appl Phys by nakazato (0)
10.1103/RevModPhys.45.574

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:54 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:07 p.m.)
Indexed	4 months ago (April 21, 2025, 12:43 a.m.)
Issued	31 years, 7 months ago (Jan. 1, 1994)
Published	31 years, 7 months ago (Jan. 1, 1994)
Published Print	31 years, 7 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{Yano_1994, title={Room-temperature single-electron memory}, volume={41}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.310117}, DOI={10.1109/16.310117}, number={9}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Yano, K. and Ishii, T. and Hashimoto, T. and Kobayashi, T. and Murai, F. and Seki, K.}, year={1994}, pages={1628–1638} }

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