DOI: 10.1109/16.285047. A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG

A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG

10.1109/16.285047

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Siekkinen, J. W., Neudeck, G. W., Glenn, J. L., & Venkatesan, S. (1994). A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG. IEEE Transactions on Electron Devices, 41(5), 862â864.

Authors 4

J.W. Siekkinen (first)
G.W. Neudeck (additional)
J.L. Glenn (additional)
S. Venkatesan (additional)

References 8 Referenced 5

10.1109/55.55243
10.1109/UGIM.1989.37313
10.1109/EDL.1987.26705 / IEEE Electron Device Letters / a new epitaxial lateral overgrowth silicon bipolar transistor by neudeck (1987)
10.1109/16.62284
10.1063/1.321593
10.1557/PROC-106-261 / Proc Materials Res Soc Symp / Resistivity and carrier mobilities in heavily doped polycrystalline silicon thin films by kim (1988)
10.1109/16.7366
10.1109/IEDM.1988.32874

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:09 p.m.)
Indexed	1 year, 11 months ago (Sept. 13, 2023, 11:26 a.m.)
Issued	31 years, 3 months ago (May 1, 1994)
Published	31 years, 3 months ago (May 1, 1994)
Published Print	31 years, 3 months ago (May 1, 1994)

Funders 0

None

BibTeX

@article{Siekkinen_1994, title={A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG}, volume={41}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.285047}, DOI={10.1109/16.285047}, number={5}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Siekkinen, J.W. and Neudeck, G.W. and Glenn, J.L. and Venkatesan, S.}, year={1994}, month=may, pages={862–864} }

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