DOI: 10.1109/16.277374. Electrical properties of heavily doped polycrystalline silicon-germanium films

Electrical properties of heavily doped polycrystalline silicon-germanium films

10.1109/16.277374

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

King, T.-J., McVittie, J. P., Saraswat, K. C., & Pfiester, J. R. (1994). Electrical properties of heavily doped polycrystalline silicon-germanium films. IEEE Transactions on Electron Devices, 41(2), 228â232.

Authors 4

T.-J. King (first)
J.P. McVittie (additional)
K.C. Saraswat (additional)
J.R. Pfiester (additional)

References 12 Referenced 117

{'key': 'ref4', 'first-page': '567', 'article-title': 'A low-temperature (< 550� C) silicon-germanium thin-film transistor technology for large-area electronics', 'author': 'king', 'year': '1991', 'journal-title': 'Int Electron Devices Meet Techn Dig'} / Int Electron Devices Meet Techn Dig / A low-temperature (< 550� C) silicon-germanium thin-film transistor technology for large-area electronics by king (1991)
10.1109/55.119180
10.1103/PhysRev.109.695
10.1109/16.57135
10.1103/PhysRevB.32.1405
10.1149/1.2055095
10.1063/1.96271
10.1063/1.96499
{'key': 'ref7', 'author': 'sze', 'year': '1981', 'journal-title': 'Physics of Semiconductor'} / Physics of Semiconductor by sze (1981)
{'key': 'ref2', 'first-page': '260', 'article-title': 'Selective deposition of polycrystalline Si<subscript>1-x</subscript>Ge<subscript>x</subscript> by rapid thermal processing', 'author': 'ozturk', 'year': '1990', 'journal-title': '?roc SPIE Int Soc Opt Eng'} / ?roc SPIE Int Soc Opt Eng / Selective deposition of polycrystalline Si<subscript>1-x</subscript>Ge<subscript>x</subscript> by rapid thermal processing by ozturk (1990)
10.1109/16.40925
10.1007/978-1-4613-1681-7 / Polycrystalline Silicon for Integrated Circuit Applications by kamins (1988)

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:54 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:09 p.m.)
Indexed	2 months ago (June 16, 2025, 9:29 a.m.)
Issued	31 years, 7 months ago (Jan. 1, 1994)
Published	31 years, 7 months ago (Jan. 1, 1994)
Published Print	31 years, 7 months ago (Jan. 1, 1994)

Funders 0

None

BibTeX

@article{King_1994, title={Electrical properties of heavily doped polycrystalline silicon-germanium films}, volume={41}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.277374}, DOI={10.1109/16.277374}, number={2}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={King, T.-J. and McVittie, J.P. and Saraswat, K.C. and Pfiester, J.R.}, year={1994}, pages={228–232} }

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