DOI: 10.1109/16.202778. Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications

10.1109/16.202778

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Chang, C. E., Asbeck, P. M., Wang, K.-C., & Brown, E. R. (1993). Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications. IEEE Transactions on Electron Devices, 40(4), 685â691.

Authors 4

C.E. Chang (first)
P.M. Asbeck (additional)
K.-C. Wang (additional)
E.R. Brown (additional)

References 15 Referenced 44

10.1063/1.97362
10.1063/1.100812
10.1109/4.98988
10.1109/16.40889
10.1109/16.129086
{'key': 'ref15', 'year': '0'} (0)
10.1063/1.104902
{'key': 'ref3', 'first-page': '593', 'author': 'lear', 'year': '1989', 'journal-title': 'Gallium Arsenide and Related Compounds 1988 Conference Proceedings'} / Gallium Arsenide and Related Compounds 1988 Conference Proceedings by lear (1989)
{'key': 'ref6', 'year': '0'} (0)
{'key': 'ref5', 'first-page': '559', 'article-title': 'Extremely high current density, low peak voltage, pseudomorphic In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/AlAs resonant tunneling diode', 'author': 'broekaert', 'year': '1989', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Extremely high current density, low peak voltage, pseudomorphic In<subscript>0.53</subscript>Ga<subscript>0.47</subscript>As/AlAs resonant tunneling diode by broekaert (1989)
10.1063/1.99951
10.1109/55.46920
10.1109/JSSC.1979.1051273
10.1109/DRC.1991.664725 / 46th Annual Device Res Conf / 36 GHz static digital frequency divider in AlInAs-GaInAs HBT technology by jensen (1991)
10.1109/IEDM.1989.74346

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed	4 months, 3 weeks ago (March 29, 2025, 12:13 p.m.)
Issued	32 years, 4 months ago (April 1, 1993)
Published	32 years, 4 months ago (April 1, 1993)
Published Print	32 years, 4 months ago (April 1, 1993)

Funders 0

None

BibTeX

@article{Chang_1993, title={Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications}, volume={40}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.202778}, DOI={10.1109/16.202778}, number={4}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Chang, C.E. and Asbeck, P.M. and Wang, K.-C. and Brown, E.R.}, year={1993}, month=apr, pages={685–691} }

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