DOI: 10.1109/16.168754. A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications

A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications

10.1109/16.168754

Crossref journal-article

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Transactions on Electron Devices (263)

Bibliography

Sun, S. W., Tsui, P. G. Y., Somero, B. M., Klein, J., Pintchovski, F., Yeargain, J. R., Pappert, B., & Bertram, R. (1992). A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications. IEEE Transactions on Electron Devices, 39(12), 2733â2739.

Authors 8

S.W. Sun (first)
P.G.Y. Tsui (additional)
B.M. Somero (additional)
J. Klein (additional)
F. Pintchovski (additional)
J.R. Yeargain (additional)
B. Pappert (additional)
R. Bertram (additional)

References 13 Referenced 13

{'key': 'ref10', 'first-page': '18.5.1', 'article-title': 'Field-plated high gain lateral bipolar transistor in standard CMOS process for BiNMOS application', 'author': 'au', 'year': '1990', 'journal-title': 'Proc IEEE CICC'} / Proc IEEE CICC / Field-plated high gain lateral bipolar transistor in standard CMOS process for BiNMOS application by au (1990)
10.1109/CICC.1992.591172
10.1109/4.98993
10.1109/4.98979
10.1109/IEDM.1991.235418
{'key': 'ref3', 'first-page': '614', 'volume': '90', 'author': 'nguyen', 'year': '1990', 'journal-title': 'Electrochem Soc Ext Abstracts'} / Electrochem Soc Ext Abstracts by nguyen (1990)
{'key': 'ref6', 'first-page': '443', 'article-title': 'The influence of fluorine on threshold voltage instabilities in P<superscript>+</superscript> polysilicon gated p-channel MOSFETs', 'author': 'baker', 'year': '1989', 'journal-title': 'JEDM Tech Dig'} / JEDM Tech Dig / The influence of fluorine on threshold voltage instabilities in P<superscript>+</superscript> polysilicon gated p-channel MOSFETs by baker (1989)
10.1109/16.62295
{'key': 'ref8', 'first-page': '183', 'article-title': 'Oxide charge trapping and HCI susceptibility of a submicron CMOS dual-poly (N<superscript>+</superscript>/P<superscript>+</superscript>) gate technology', 'author': 'sun', 'year': '1989', 'journal-title': 'Proc IEEE IRPS'} / Proc IEEE IRPS / Oxide charge trapping and HCI susceptibility of a submicron CMOS dual-poly (N<superscript>+</superscript>/P<superscript>+</superscript>) gate technology by sun (1989)
{'key': 'ref7', 'first-page': '238', 'article-title': 'Doping of N<superscript>+</superscript> and P<superscript>+</superscript> polysilicon in a dual-gate CMOS process', 'author': 'wong', 'year': '1988', 'journal-title': 'IEDM Tech Dig'} / IEDM Tech Dig / Doping of N<superscript>+</superscript> and P<superscript>+</superscript> polysilicon in a dual-gate CMOS process by wong (1988)
{'key': 'ref2', 'first-page': '18.7.1', 'article-title': 'A dual-poly (N<superscript>+</superscript>/P<superscript>+</superscript>) gate, Ti-SALICIDE, double-metal technology for submicron CMOS ASIC and logic applications', 'author': 'sun', 'year': '1989', 'journal-title': 'Proc IEEE CICC'} / Proc IEEE CICC / A dual-poly (N<superscript>+</superscript>/P<superscript>+</superscript>) gate, Ti-SALICIDE, double-metal technology for submicron CMOS ASIC and logic applications by sun (1989)
{'key': 'ref1', 'article-title': 'Integration of power LDMOS into a low-voltage 0.5 ?m BiCMOS technology', 'author': 'tsui', 'year': '0', 'journal-title': '1992 IEEE International Electron Device Meeting'} / 1992 IEEE International Electron Device Meeting / Integration of power LDMOS into a low-voltage 0.5 ?m BiCMOS technology by tsui (0)
{'key': 'ref9', 'first-page': '284', 'author': 'sze', 'year': '1981', 'journal-title': 'Physics of Semiconductor Devices'} / Physics of Semiconductor Devices by sze (1981)

Dates

Type	When
Created	22 years, 11 months ago (Aug. 24, 2002, 4:40 p.m.)
Deposited	3 years, 8 months ago (Nov. 29, 2021, 2:08 p.m.)
Indexed	1 year, 11 months ago (Sept. 13, 2023, 12:16 p.m.)
Issued	33 years, 7 months ago (Jan. 1, 1992)
Published	33 years, 7 months ago (Jan. 1, 1992)
Published Print	33 years, 7 months ago (Jan. 1, 1992)

Funders 0

None

BibTeX

@article{Sun_1992, title={A fully complementary BiCMOS technology for sub-half-micrometer microprocessor applications}, volume={39}, ISSN={0018-9383}, url={http://dx.doi.org/10.1109/16.168754}, DOI={10.1109/16.168754}, number={12}, journal={IEEE Transactions on Electron Devices}, publisher={Institute of Electrical and Electronics Engineers (IEEE)}, author={Sun, S.W. and Tsui, P.G.Y. and Somero, B.M. and Klein, J. and Pintchovski, F. and Yeargain, J.R. and Pappert, B. and Bertram, R.}, year={1992}, pages={2733–2739} }

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